Atomic layer etching processes
    8.
    发明授权

    公开(公告)号:US11183367B2

    公开(公告)日:2021-11-23

    申请号:US16881868

    申请日:2020-05-22

    摘要: Atomic layer etching (ALE) processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase non-metal halide reactant and a second vapor phase halide reactant. In some embodiments both the first and second reactants are chloride reactants. In some embodiments the first reactant is fluorinating gas and the second reactant is a chlorinating gas. In some embodiments a thermal ALE cycle is used in which the substrate is not contacted with a plasma reactant.

    ATOMIC LAYER ETCHING PROCESSES
    10.
    发明申请

    公开(公告)号:US20200312620A1

    公开(公告)日:2020-10-01

    申请号:US16881868

    申请日:2020-05-22

    摘要: Atomic layer etching (ALE) processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase non-metal halide reactant and a second vapor phase halide reactant. In some embodiments both the first and second reactants are chloride reactants. In some embodiments the first reactant is fluorinating gas and the second reactant is a chlorinating gas. In some embodiments a thermal ALE cycle is used in which the substrate is not contacted with a plasma reactant.