A method for analyzing a Schottky junction includes the step of obtaining electrical field dependence of the Schottky barrier height which shows a degree of dependence of the Schottky barrier height of the Schottky junction formed on a semiconductor wafer on an electrical field applied to an interface of the Schottky junction in a case where a reverse bias is applied to the Schottky junction. The method includes the steps of: applying the reverse bias of a plurality of voltage values to the Schottky junction; measuring a plurality of current values of a current flowing through the Schottky junction and a plurality of capacitance values of the Schottky junction, corresponding to the reverse bias of the plurality of voltage values; obtaining current-voltage characteristics and capacitance-voltage characteristics of the Schottky junction based on the plurality of current values and the plurality of capacitance values; calculating depletion layer charge-voltage characteristics showing a correlation between an accumulated charge in a depletion layer and a voltage by integrating the capacitance-voltage characteristics with respect to a voltage; and obtaining the electrical field dependence of the Schottky barrier height based on the current-voltage characteristics and the depletion layer charge-voltage characteristics.