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发明授权
US5943280A Semiconductor memory device which can be tested while selecting word lines successively at high speed 失效
半导体存储器件，可以在高速连续选择字线的同时进行测试

Semiconductor memory device which can be tested while selecting word lines successively at high speed
摘要：
When a special operation mode is instructed, a test oscillation circuit operating at a cycle shorter than a refresh oscillation circuit specifying the cycle of self refresh is activated according to an external row address strobe signal. The internal row address strobe signal is provided to row related control circuitry via a selector. An internal row address strobe signal can be rendered active at a cycle shorter than the cycle of the external row address strobe signal, to carry out row selection. A row is selected at a cycle shorter than the transition cycle of an external signal.
摘要（中）：

当指示特殊操作模式时，根据外部行地址选通信号激活以比指定自刷新周期的刷新振荡电路短的周期工作的测试振荡电路。 内部行地址选通信号通过选择器提供给行相关的控制电路。 可以以比外部行地址选通信号的周期短的周期使内部行地址选通信号激活，以执行行选择。 以比外部信号的转换周期短的周期来选择一行。

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