The disclosure relates to the field of memories in integrated circuit form. It can be applied more particularly to the field of EPROM or EEPROM type electrically programmable non-volatile memories. A memory array and read circuits are proposed in order to improve the time taken to read a data element. During a reading operation a read circuit is connected firstly to an erased cell and secondly to a programmed cell. The memory outputs a 1 for a read operation that access a first memory cell having an erased state and a second memory cell having a programmed cell, and further, the memory outputs a 0 for a read operation that access a first memory cell having a programmed state and a second memory cell having an erased state.