发明授权
US5950083A Method for fabricating CMOS transistor with self-aligned silicide
(salicide) structure
失效
制造具有自对准硅化物（硅化物）结构的CMOS晶体管的方法
- 专利标题： Method for fabricating CMOS transistor with self-aligned silicide (salicide) structure
- 专利标题（中）： 制造具有自对准硅化物（硅化物）结构的CMOS晶体管的方法
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申请号： US533162申请日： 1995-09-25
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公开(公告)号： US5950083A公开(公告)日： 1999-09-07
- 发明人: Ken Inoue , Makoto Sekine
- 申请人： Ken Inoue , Makoto Sekine
- 申请人地址： JPX Tokyo
- 专利权人： NEC Corporation
- 当前专利权人： NEC Corporation
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX6-235154 19940929
- 主分类号： C23C16/50
- IPC分类号： C23C16/50 ; C23C16/511 ; H01L21/28 ; H01L21/285 ; H01L21/8238 ; H01L27/092
摘要：
A method for fabricating a CMOS transistor having a salicide structure is disclosed. A naturally formed oxide film covering surfaces of polycrystalline silicon film patterns, a P-type diffusion layer and an N-type diffusion layer is removed. Then, by introducing at least a titanium tetrachloride gas and a hydrogen gas into an electron cyclotron resonance plasma excited chemical vapor deposition system using microwaves (or into a plasma excited chemical vapor deposition system using helicon waves), titanium/silicide films are selectively formed on surfaces of the polycrystalline silicon film patterns and the P-type diffusion layer and the N-type diffusion layer. The crystal structure of the titanium/silicide films is of a C54 structure. During the formation of the titanium/silicide film, it is possible to suppress the occurrence of bridging and condensation phenomena.
公开/授权文献
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