发明授权
- 专利标题： Method of forming an interconnect
- 专利标题（中）： 形成互连的方法
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申请号： US629442申请日： 1996-04-09
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公开(公告)号： US5950099A公开(公告)日： 1999-09-07
- 发明人: Naohiro Shoda , Katsuya Okumura
- 申请人： Naohiro Shoda , Katsuya Okumura
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/285 ; H01L21/3205 ; H01L23/52 ; H01L21/265
摘要：
A method for fabricating a damascene interconnect includes the steps of depositing a metal layer of the surface of an insulating film; etching the metal layer and the insulating film to form an insulating groove; depositing a silicon layer on an upper surface on the metal layer and on each sidewall and a bottom of the insulating groove; annealing the silicon layer and the metal layer to form a silicide layer; implanting ions in the bottom of the insulating groove; and depositing an interconnect material in the insulating groove using selective chemical vapor deposition. In one embodiment, the metal layer is a titanium layer, the interconnect material is tungsten, and the implanted ions are arsenic ions.
公开/授权文献
- US5150376A Laser source 公开/授权日：1992-09-22
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