发明授权
- 专利标题： Method of fabricating a conductive plug
- 专利标题（中）： 制造导电插头的方法
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申请号： US768855申请日： 1996-12-17
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公开(公告)号： US5950108A公开(公告)日： 1999-09-07
- 发明人: Clint Wu , Horng-Bor Lu , Jenn-Tarng Lin
- 申请人： Clint Wu , Horng-Bor Lu , Jenn-Tarng Lin
- 申请人地址： TWX
- 专利权人： United Microelectronics Corp.
- 当前专利权人： United Microelectronics Corp.
- 当前专利权人地址： TWX
- 优先权： TWX85110947 19960907
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L21/44
摘要：
A method of forming a conductive plug is disclosed. A device with a conductive region is formed on a semiconductor substrate. An insulating layer is formed on the semiconductor substrate. The insulating layer is etched to form a contact window which exposes the conductive region of the device. A diffusion barrier layer is formed on the exposed conductive region and the periphery of the contact window. A hydrogen plasma treatment is performed in a reaction chamber; and a conductive material is filled in the contact window, to form the conductive plug.
公开/授权文献
- US5222559A Valves 公开/授权日：1993-06-29
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