公开(公告)号：US6093639A

公开(公告)日：2000-07-25

申请号：US739853

申请日：1996-10-30

Applicant: Clint Wu ,  Horng-Bor Lu ,  Jenn-Tarng Lin

Inventor： Clint Wu ,  Horng-Bor Lu ,  Jenn-Tarng Lin

IPC: H01L21/768 ,  H01L21/4763 ,  H01L21/44

CPC classification number: H01L21/76864 ,  H01L21/76843

Abstract: A process for fabricating contact plugs for semiconductor IC devices. An insulating layer is formed over the surface of an IC substrate. The insulating layer is then patterned for forming contact vias revealing the surface of an electrically conductive region of the IC circuitry that requires electrical connections by the contact plugs. A glue (adhesive) layer is then formed over the sidewall surface inside the contact vias. The glue (adhesive) layer is densified by either a rapid thermal annealing or a plasma treatment in order to prevent the formation of voids when the plugs are formed. The internal space of the contact vias are then filled with an electrically conductive material to form the contact plugs. The surface of the device substrate is then polished to remove the electrically conductive material and glue layer covering the surface of the insulating layer until the insulating layer surface is exposed, and top surface of the formed contact plug is planarized flat with the surface of the insulating layer.

Abstract translation: 一种用于制造用于半导体IC器件的接触插塞的工艺。 在IC基板的表面上形成绝缘层。 然后对绝缘层进行图案化，以形成接触通孔，该接触通孔显示IC电路的导电区域的表面，该导电区域需要通过接触插头进行电连接。 然后在接触通孔内部的侧壁表面上形成胶（粘合剂）层。 胶粘剂（粘合剂）层通过快速热退火或等离子体处理来致密化，以防止在形成插塞时形成空隙。 然后用导电材料填充接触孔的内部空间以形成接触塞。 然后抛光器件衬底的表面以去除覆盖绝缘层的表面的导电材料和胶层，直到绝缘层表面露出，并且形成的接触插塞的顶表面与绝缘体的表面平坦化 层。

公开(公告)号：US5950108A

公开(公告)日：1999-09-07

申请号：US768855

申请日：1996-12-17

Applicant: Clint Wu ,  Horng-Bor Lu ,  Jenn-Tarng Lin

Inventor： Clint Wu ,  Horng-Bor Lu ,  Jenn-Tarng Lin

IPC: H01L21/768 ,  H01L21/44

CPC classification number: H01L21/76862 ,  H01L21/76843 ,  H01L21/76877

Abstract: A method of forming a conductive plug is disclosed. A device with a conductive region is formed on a semiconductor substrate. An insulating layer is formed on the semiconductor substrate. The insulating layer is etched to form a contact window which exposes the conductive region of the device. A diffusion barrier layer is formed on the exposed conductive region and the periphery of the contact window. A hydrogen plasma treatment is performed in a reaction chamber; and a conductive material is filled in the contact window, to form the conductive plug.

Abstract translation: 公开了一种形成导电插塞的方法。 具有导电区域的器件形成在半导体衬底上。 绝缘层形成在半导体衬底上。 绝缘层被蚀刻以形成暴露该器件的导电区域的接触窗口。 在暴露的导电区域和接触窗的周边上形成扩散阻挡层。 在反应室中进行氢等离子体处理; 并且导电材料填充在接触窗口中，以形成导电插塞。