发明授权
- 专利标题： Manufacturing method of semiconductor substrate and inspection method therefor
- 专利标题（中）： 半导体衬底的制造方法及其检测方法
-
申请号： US801113申请日： 1997-02-14
-
公开(公告)号： US5951755A公开(公告)日： 1999-09-14
- 发明人: Moriya Miyashita , Masanobu Ogino , Tadahide Hoshi , Masanori Numano , Shuichi Samata , Akiko Sekihara , Keiko Akita
- 申请人： Moriya Miyashita , Masanobu Ogino , Tadahide Hoshi , Masanori Numano , Shuichi Samata , Akiko Sekihara , Keiko Akita
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX8-027970 19960215
- 主分类号： H01L21/322
- IPC分类号： H01L21/322 ; C30B25/92
摘要：
A manufacturing method for manufacturing a semiconductor substrate has first annealing step for annealing silicon single crystal to permit oxygen embryos or oxygen precipitations grown from the oxygen embryos precipitating in a predetermined region and a second annealing step for permitting said oxygen embryos or said oxygen precipitations to contract using a second temperature range higher than the first temperature range, said second temperature range being high enough to contract said oxygen embryos and low enough to prevent redistribution of boron from affecting to device characteristics, to form a denuded zone in said predetermined region at the principal surface. An inspection method for inspecting a semiconductor substrate further has measuring step, subsequent to said first and second annealing steps for measuring the density of oxygen embryos grown into oxygen precipitations among those precipitated in said silicon single crystal.
公开/授权文献
- USD416183S Side clamp 公开/授权日：1999-11-09