公开(公告)号：US5951755A

公开(公告)日：1999-09-14

申请号：US801113

申请日：1997-02-14

申请人： Moriya Miyashita ,  Masanobu Ogino ,  Tadahide Hoshi ,  Masanori Numano ,  Shuichi Samata ,  Akiko Sekihara ,  Keiko Akita

发明人： Moriya Miyashita ,  Masanobu Ogino ,  Tadahide Hoshi ,  Masanori Numano ,  Shuichi Samata ,  Akiko Sekihara ,  Keiko Akita

IPC分类号： H01L21/322 ,  C30B25/92

CPC分类号： H01L21/3225

摘要： A manufacturing method for manufacturing a semiconductor substrate has first annealing step for annealing silicon single crystal to permit oxygen embryos or oxygen precipitations grown from the oxygen embryos precipitating in a predetermined region and a second annealing step for permitting said oxygen embryos or said oxygen precipitations to contract using a second temperature range higher than the first temperature range, said second temperature range being high enough to contract said oxygen embryos and low enough to prevent redistribution of boron from affecting to device characteristics, to form a denuded zone in said predetermined region at the principal surface. An inspection method for inspecting a semiconductor substrate further has measuring step, subsequent to said first and second annealing steps for measuring the density of oxygen embryos grown into oxygen precipitations among those precipitated in said silicon single crystal.

摘要翻译： 用于制造半导体衬底的制造方法具有用于使硅单晶退火的第一退火步骤，以允许从预定区域中的氧胚生长的氧胚胎或氧沉淀，以及用于允许所述氧胚胎或所述氧沉淀物收缩的第二退火步骤 使用高于第一温度范围的第二温度范围，所述第二温度范围足够高以收缩所述氧胚，并且足够低以防止硼的再分布影响到设备特性，以在主体的所述预定区域中形成裸露区域 表面。 用于检查半导体衬底的检查方法还具有测量步骤，在所述第一和第二退火步骤之后，测量在所述硅单晶中析出的氧沉淀物中生长的氧胚胎的密度。

公开(公告)号：US5068704A

公开(公告)日：1991-11-26

申请号：US520446

申请日：1990-05-08

申请人： Akio Nakagawa ,  Kaoru Imamura ,  Ryo Sato ,  Tadahide Hoshi

发明人： Akio Nakagawa ,  Kaoru Imamura ,  Ryo Sato ,  Tadahide Hoshi

IPC分类号： H01L29/68 ,  H01L21/02 ,  H01L21/18 ,  H01L21/22 ,  H01L21/331 ,  H01L21/336 ,  H01L29/739 ,  H01L29/78

CPC分类号： H01L29/66333 ,  H01L21/187 ,  H01L21/2205 ,  Y10S148/012 ,  Y10S148/157

摘要： A method of manufacturing a semiconductor device comprising the steps of bringing a mirror-polished surface of a first semiconductor substrate of a first conductivity type into contact with a mirror-polished surface of a second semiconductor substrate of a second conductivity type having an impurity concentration which is lower than that of said first conductivity type, in a clean atmosphere, and thermally heating said first and second semiconductor substrates so that they unite. Impurity is diffused from said first semiconductor substrate into said second semiconductor substrate, thereby forming a diffusion layer of a first conductivity type in said second semiconductor substrate. A total amount of impurity of said diffusion layer is 1.times.10.sup.13 /cm.sup.2 to 2.times.10.sup.15 /cm.sup.2, to form a pn junction in said second semiconductor substrate.

摘要翻译： 一种制造半导体器件的方法，包括以下步骤：将具有第一导电类型的第一半导体衬底的镜面抛光表面与具有杂质浓度的第二导电类型的第二半导体衬底的镜面抛光表面接触， 在清洁的气氛中低于所述第一导电类型，并且热加热所述第一和第二半导体衬底以使它们团结起来。 杂质从所述第一半导体衬底扩散到所述第二半导体衬底中，从而在所述第二半导体衬底中形成第一导电类型的扩散层。 所述扩散层的杂质的总量为1×10 13 / cm 2至2×10 15 / cm 2，以在所述第二半导体衬底中形成pn结。

公开(公告)号：US4935386A

公开(公告)日：1990-06-19

申请号：US161097

申请日：1988-02-26

申请人： Akio Nakagawa ,  Kaoru Imamura ,  Ryo Sato ,  Tadahide Hoshi

发明人： Akio Nakagawa ,  Kaoru Imamura ,  Ryo Sato ,  Tadahide Hoshi

IPC分类号： H01L29/68 ,  H01L21/02 ,  H01L21/18 ,  H01L21/22 ,  H01L21/331 ,  H01L21/336 ,  H01L29/739 ,  H01L29/78

CPC分类号： H01L29/66333 ,  H01L21/187 ,  H01L21/2205 ,  Y10S148/012 ,  Y10S148/157

摘要： A method of manufacturing a semiconductor device comprising the steps of bringing a mirror-polished surface of a first semiconductor substrate of a first conductivity type into contact with a mirror-polished surface of a second semiconductor substrate of a second conductivity type having an impurity concentration which is lower than that of said first conductivity type, in a clean atmosphere, and thermally heating said first and second semiconductor substrates so that they unite. Impurity is diffused from said first semicondutor substrate into said second semiconductor substrate, thereby forming a diffusion layer of a first conductivity type in said second semiconductor substrate. A total amount of impurity of said diffusion layer is 1.times.10.sup.13 /cm.sup.2 to 2.times.10.sup.15 /cm.sup.2, to form a pn junction in said second semiconductor substrate.

摘要翻译： 一种制造半导体器件的方法，包括以下步骤：将具有第一导电类型的第一半导体衬底的镜面抛光表面与具有杂质浓度的第二导电类型的第二半导体衬底的镜面抛光表面接触， 在清洁的气氛中低于所述第一导电类型，并且热加热所述第一和第二半导体衬底以使它们团结起来。 杂质从所述第一半导体基板扩散到所述第二半导体衬底中，从而在所述第二半导体衬底中形成第一导电类型的扩散层。 所述扩散层的杂质的总量为1×10 13 / cm 2至2×10 15 / cm 2，以在所述第二半导体衬底中形成pn结。

公开(公告)号：US5352625A

公开(公告)日：1994-10-04

申请号：US800074

申请日：1991-11-29

申请人： Tadahide Hoshi

发明人： Tadahide Hoshi

IPC分类号： H01L21/74 ,  H01L21/321 ,  H01L21/762 ,  H01L21/763 ,  H01L21/76

CPC分类号： H01L21/3212 ,  H01L21/76264 ,  H01L21/763 ,  H01L21/76275 ,  H01L21/76286 ,  Y10S148/05

摘要： In manufacturing a semiconductor substrate having a dielectric isolation structure, a dielectric film is formed at a semiconductor layer formed by epitaxial growth. Grooves for carrying out dielectric isolation to deposit filler thereon thereafter are used to polish the deposited filler. The polishing condition is obeyed where polishing rate ratio of the filler to the dielectric film is one fifth or less. Thus, an active semiconductor layer in which where elements are to be formed can be provided with good productivity, state where the flatness thereof is good and the layer thickness is uniformly and precisely controlled.

摘要翻译： 在制造具有介电隔离结构的半导体衬底时，在通过外延生长形成的半导体层上形成电介质膜。 用于进行绝缘隔离以在其上沉积填料的槽用于抛光沉积的填料。 在填料与电介质膜的抛光速率比为五分之一以下时，遵循抛光条件。 因此，其中要形成元件的有源半导体层可以具有良好的生产率，其平坦度好并且均匀且精确地控制层厚度的状态。

公开(公告)号：US5273553A

公开(公告)日：1993-12-28

申请号：US873237

申请日：1992-04-24

申请人： Tadahide Hoshi ,  Kiyoshi Yoshikawa

发明人： Tadahide Hoshi ,  Kiyoshi Yoshikawa

IPC分类号： H01L21/00 ,  H01L21/683 ,  H01L21/98 ,  B65G47/91

CPC分类号： H01L21/67092 ,  H01L21/6838 ,  H01L25/50 ,  H01L2924/0002 ,  Y10S148/006 ,  Y10T29/41 ,  Y10T29/413

摘要： There is provided a method for bonding at least two semiconductor wafers to each other which comprises the steps of warping one of the semiconductor wafers, bringing the warped semiconductor wafer into contact with the other semiconductor wafer at one contact point, and reducing pressure in an atmosphere surrounding the semiconductor wafers to flatten the warped semiconductor wafer. An apparatus for bonding wafers using the above bonding method comprises a first wafer holder for warping and holding one of two wafers and a second wafer holder for holding the other wafer. First and second covers are attached so as to surround the first and second wafer holders. The apparatus further comprises a shaft for rotating the first and second wafer holders so that one of the wafers contact the other wafer at one contact point and the first and second covers are connected to each other to form a chamber. A vacuum pump for reducing pressure in the chamber is connected to the chamber through an exhaust hole provided at one of the first and second covers.

摘要翻译： 提供了一种用于将至少两个半导体晶片彼此接合的方法，其包括使一个半导体晶片翘曲的步骤，使翘曲的半导体晶片在一个接触点处与另一个半导体晶片接触，并降低气氛中的压力 围绕半导体晶片以使翘曲的半导体晶片平坦化。 使用上述接合方法接合晶片的设备包括用于翘曲并保持两个晶片之一的第一晶片保持器和用于保持另一个晶片的第二晶片保持器。 第一和第二盖被附接以围绕第一和第二晶片保持器。 该装置还包括用于旋转第一和第二晶片保持器的轴，使得一个晶片在一个接触点处接触另一个晶片，并且第一和第二盖彼此连接以形成室。 用于减小腔室中的压力的​​真空泵通过设置在第一和第二盖中的一个上的排气孔连接到腔室。

公开(公告)号：US5196375A

公开(公告)日：1993-03-23

申请号：US737805

申请日：1991-07-29

申请人： Tadahide Hoshi

发明人： Tadahide Hoshi

IPC分类号： H01L21/18

CPC分类号： H01L21/187 ,  Y10S148/012 ,  Y10S148/017 ,  Y10S148/135

摘要： A method for manufacturing a bonded semiconductor body including contacting the flat mirror surfaces of semiconductor substrate wafers used as semiconductor element substrates, and subjecting the adhered semiconductor substrate wafers to a heat treatment at a temperature higher than 200.degree. C. and lower than the melting point of the semiconductor substrate wafers to bond the mirror surfaces. The surface roughness of each of the mirror surfaces of the semiconductor substrate wafers is set not more than 130 .ANG. at its maximum value when measured in a range of 1 mm on a reference plane provided in a predetermined area of the mirror surface.

摘要翻译： 一种用于制造接合半导体本体的方法，包括使用作半导体元件衬底的半导体衬底晶片的平面镜面接触，并且使粘合的半导体衬底晶片在高于200℃并低于熔点的温度下进行热处理 的半导体衬底晶片以结合镜面。 当半导体衬底晶片的每个镜面的表面粗糙度在设置在镜面的预定区域中的参考平面上在1mm的范围内测量时，其最大值设定为不超过130安培。

公开(公告)号：US5129827A

公开(公告)日：1992-07-14

申请号：US571980

申请日：1990-08-24

申请人： Tadahide Hoshi ,  Kiyoshi Yoshikawa

发明人： Tadahide Hoshi ,  Kiyoshi Yoshikawa

IPC分类号： H01L21/02 ,  H01L21/00 ,  H01L21/683 ,  H01L21/98

CPC分类号： H01L21/67092 ,  H01L21/6838 ,  H01L25/50 ,  H01L2924/0002 ,  Y10S148/012 ,  Y10T29/413

摘要： There is provided a method for bonding at least two semiconductor wafers to each other which comprises the steps of warping one of the semiconductor wafers, bringing the warped semiconductor wafer into contact with the other semiconductor wafer at one contact point, and reducing pressure in an atmosphere surrounding the semiconductor wafers to flatten the warped semiconductor wafer. An apparatus for bonding wafers using the above bonding method comprises a first wafer holder for warping and holding one of two wafers and a second wafer holder for holding the other wafer. First and second covers are attached so as to surround the first and second wafer holders. The apparatus further comprises a shaft for rotating the first and second wafer holders so that one of the wafers contact the other wafer at one contact point and the first and second covers are connected to each other to form a chamber. A vacuum pump for reducing pressure in the chamber is connected to the chamber through an exhaust hole provided at one of the first and second covers.

摘要翻译： 提供了一种用于将至少两个半导体晶片彼此接合的方法，其包括使一个半导体晶片翘曲的步骤，使翘曲的半导体晶片在一个接触点处与另一个半导体晶片接触，并降低气氛中的压力 围绕半导体晶片以使翘曲的半导体晶片平坦化。 使用上述接合方法接合晶片的设备包括用于翘曲并保持两个晶片之一的第一晶片保持器和用于保持另一个晶片的第二晶片保持器。 第一和第二盖被附接以围绕第一和第二晶片保持器。 该装置还包括用于旋转第一和第二晶片保持器的轴，使得一个晶片在一个接触点处接触另一个晶片，并且第一和第二盖彼此连接以形成室。 用于减小腔室中的压力的​​真空泵通过设置在第一和第二盖中的一个上的排气孔连接到腔室。