发明授权
US5956617A Method of manufacturing a semiconductor device employing salicide
technology
失效
制造使用自对准硅化物技术的半导体器件的方法
- 专利标题： Method of manufacturing a semiconductor device employing salicide technology
- 专利标题（中）： 制造使用自对准硅化物技术的半导体器件的方法
-
申请号： US816183申请日： 1997-03-12
-
公开(公告)号： US5956617A公开(公告)日： 1999-09-21
- 发明人: Masatoshi Kimura , Masao Sugiyama
- 申请人： Masatoshi Kimura , Masao Sugiyama
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX7-170968 19950706
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/285 ; H01L21/336 ; H01L21/8234 ; H01L21/8238 ; H01L21/44
摘要：
After formation of a gate electrode and source/drain regions, N ions or O ions are implanted into a predetermined region using a resist mask, and a Ti layer is deposited on the entire face of a substrate. The Ti layer is then silicided in self-alignment by a heat treatment, whereby a high resistivity TixNySiz mixing layer is formed the predetermined region on the gate electrode and the source/drain regions 10, and a low resistivity TiSi.sub.2 layer 12 is formed on another region.
公开/授权文献
- US5199737A Method of controlling a semi-active chassis 公开/授权日：1993-04-06
信息查询
IPC分类:
