发明授权
- 专利标题: Electrically programmable memory cell arrangement and method for its manufacture
- 专利标题(中): 电可编程存储单元布置及其制造方法
-
申请号: US779446申请日: 1997-01-07
-
公开(公告)号: US5959328A公开(公告)日: 1999-09-28
- 发明人: Wolfgang Krautschneider , Lothar Risch , Franz Hofmann , Hans Reisinger
- 申请人: Wolfgang Krautschneider , Lothar Risch , Franz Hofmann , Hans Reisinger
- 申请人地址: DEX Munich
- 专利权人: Siemens Aktiengesellschaft
- 当前专利权人: Siemens Aktiengesellschaft
- 当前专利权人地址: DEX Munich
- 优先权: DEX19600422 19960108
- 主分类号: H01L21/8247
- IPC分类号: H01L21/8247 ; H01L21/8246 ; H01L29/788 ; H01L29/792 ; H01L29/76
摘要:
An electrically programmable memory cell arrangement has a plurality of individual memory cells that respectively has an MOS transistor with a gate dielectric with traps, and which are arranged in rows that run in parallel. Adjacent rows thereby respectively run in alternating fashion on the bottom of the longitudinal trenches (5) and between adjacent longitudinal trenches (5) and are insulated against one another. The memory cell arrangement can be manufactured by means of self-adjusting process steps with a surface requirement per memory cell of 2 F.sup.2 (F: minimum structural size).