发明授权
- 专利标题： Method of making a dielectric for an integrated circuit
- 专利标题（中）： 制造集成电路电介质的方法
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申请号： US775790申请日： 1996-12-31
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公开(公告)号： US5960302A公开(公告)日： 1999-09-28
- 发明人: Yi Ma , Pradip Kumar Roy , Kevin Yun-Kang Wu
- 申请人： Yi Ma , Pradip Kumar Roy , Kevin Yun-Kang Wu
- 申请人地址： NJ Murray Hill
- 专利权人： Lucent Technologies, Inc.
- 当前专利权人： Lucent Technologies, Inc.
- 当前专利权人地址： NJ Murray Hill
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L29/51 ; H01L21/3205
摘要：
A composite 3-layer gate dielectric is disclosed. The upper and lower layers have a concentration of nitrogen atoms, while the middle layer has very few nitrogen atoms. The presence of the nitrogen atoms in the top sublayers provides resistance to boron diffusion from the top conductive layer and plasma damage during polysilicon gate stack formation and the presence of nitrogen in the bottom sublayer near the silicon-dielectric interface improves wearout, endurance, resistance to current stress and electron traps.
公开/授权文献
- US5153360A Gun lock 公开/授权日：1992-10-06
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