发明授权
- 专利标题： Integrated circuit device and process for its manufacture
- 专利标题（中）： 集成电路器件及其制造工艺
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申请号： US739144申请日： 1996-10-28
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公开(公告)号： US5962113A公开(公告)日： 1999-10-05
- 发明人: Hugh Ralph Brown , Kenneth Raymond Carter , Hyuk-Jin Cha , Richard Anthony Dipietro , James Lupton Hedrick , John Patrick Hummel , Robert Dennis Miller , Do Yeung Yoon
- 申请人： Hugh Ralph Brown , Kenneth Raymond Carter , Hyuk-Jin Cha , Richard Anthony Dipietro , James Lupton Hedrick , John Patrick Hummel , Robert Dennis Miller , Do Yeung Yoon
- 申请人地址： NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： NY Armonk
- 主分类号： C08G77/455
- IPC分类号： C08G77/455 ; C08G73/10 ; C09D183/10 ; H01L21/316 ; H01L21/768 ; H01L23/498 ; H01L23/522 ; B32B3/10 ; B32B15/08
摘要：
The invention relates to an integrated circuit device comprising (i) a substrate; (ii) metallic circuit lines positioned on the substrate and (iii) a dielectric material positioned on the circuit lines. The dielectric material comprises the reaction product of an organic polysilica and polyamic ester preferably terminated with an alkoxysilyl alkyl group.