发明授权
- 专利标题： Semiconductor device and method for fabricating the same
- 专利标题（中）： 半导体装置及其制造方法
-
申请号： US908204申请日： 1997-08-07
-
公开(公告)号： US5962872A公开(公告)日： 1999-10-05
- 发明人: Hongyong Zhang , Hideto Ohnuma , Naoaki Yamaguchi , Yasuhiko Takemura
- 申请人： Hongyong Zhang , Hideto Ohnuma , Naoaki Yamaguchi , Yasuhiko Takemura
- 申请人地址： JPX Kanagawa
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JPX Kanagawa
- 优先权： JPX5-269778 19931001
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336 ; H01L21/77 ; H01L21/84 ; H01L29/772 ; H01L29/786 ; H01L29/04 ; H01L29/76
摘要：
In a thin film transistor (TFT), a mask is formed on a gate electrode, and a porous anodic oxide is formed in both sides of the gate electrode using a relatively low voltage. A barrier anodic oxide is formed between the gate electrode and the porous anodic oxide and on the gate electrode using a relatively high voltage. A gate insulating film is etched using the barrier anodic oxide as a mask. The porous anodic oxide is selectively etched after etching barrier anodic oxide, to obtain a region of an active layer on which the gate insulating film is formed and the other region of the active layer on which the gate insulating film is not formed. An element including at least one of oxygen, nitrogen and carbon is introduced into the region of the active layer at high concentration in comparison with a concentration of the other region of the active layer. Further, N- or P-type impurity is introduced into the active layer. Accordingly, high resistance impurity regions are formed in both sides of a channel forming region.
公开/授权文献
- US5305108A Switcher mixer priority architecture 公开/授权日：1994-04-19
信息查询
IPC分类:
