Invention Grant
- Patent Title: Methods of determining parameters of a semiconductor device and the width of an insulative spacer of a semiconductor device
- Patent Title (中): 确定半导体器件的参数和半导体器件的绝缘间隔物的宽度的方法
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Application No.: US853853Application Date: 1997-05-09
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Publication No.: US5963784APublication Date: 1999-10-05
- Inventor: Subhas Bothra , Xi-Wei Lin
- Applicant: Subhas Bothra , Xi-Wei Lin
- Applicant Address: CA San Jose
- Assignee: VLSI Technology, Inc.
- Current Assignee: VLSI Technology, Inc.
- Current Assignee Address: CA San Jose
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L23/544 ; G01R31/26 ; G01R27/08
Abstract:
The present invention provides methods of determining a smallest dimension of a fabricated device on a semiconductor substrate, methods of determining width of a structure comprising a refractory metal silicide, methods of determining parameters of a semiconductor device comprising a refractory metal silicide, and methods of determining width of an insulative spacer of a semiconductor device. One aspect of the present invention provides a method of determining a smallest dimension of a fabricated device on a semiconductor substrate comprising: providing a first substrate area and a second substrate area; subjecting the first substrate area and the second substrate area to the same processing conditions to achieve regions of like material on the first and second substrate areas, the like material in the first area having a smallest dimension which is greater than a smallest dimension of the like material in the second area; determining parameters of the first substrate area; and determining said smallest dimension of the like material in the second substrate area using the determined parameters of the first substrate area.
Public/Granted literature
- US4130736A Telecommunication system with keyboard selection Public/Granted day:1978-12-19
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