发明授权
US5966024A Sensitive method of evaluating process induced damage in MOSFETs using a
differential amplifier operational principle
失效
使用差分放大器工作原理评估MOSFET中工艺引起的损坏的敏感方法
- 专利标题： Sensitive method of evaluating process induced damage in MOSFETs using a differential amplifier operational principle
- 专利标题（中）： 使用差分放大器工作原理评估MOSFET中工艺引起的损坏的敏感方法
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申请号： US784325申请日： 1997-01-16
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公开(公告)号： US5966024A公开(公告)日： 1999-10-12
- 发明人: Nguyen D. Bui , Scott Zheng
- 申请人： Nguyen D. Bui , Scott Zheng
- 申请人地址： CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： CA Sunnyvale
- 主分类号： G01R31/26
- IPC分类号： G01R31/26 ; H01L21/66 ; H01L23/544
摘要：
Techniques for measuring process induced damage, such as damage experienced during plasma etching or ion implementation, utilize a differential amplifier having multi-layer antennas (capacitors) of different sizes formed on respective inputs. Measurement of .DELTA.Ids (the difference between Ids.sub.1 and Ids.sub.2 off a MOSFET of the differential pair) or .DELTA.Idlin provides a sensitive and accurate measure of process induced damage. The techniques can be applied to monitor process induced damage while the manufacturing process is ongoing or as a measure of quality of the finished product.
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