发明授权
- 专利标题： Method of forming dual field isolation structures
- 专利标题（中）： 形成双场隔离结构的方法
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申请号： US36288申请日： 1998-03-06
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公开(公告)号： US5966618A公开(公告)日： 1999-10-12
- 发明人: Yu Sun , Tuan D. Pham , Mark T. Ramsbey , Chi Chang
- 申请人： Yu Sun , Tuan D. Pham , Mark T. Ramsbey , Chi Chang
- 申请人地址： CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： CA Sunnyvale
- 主分类号： H01L21/316
- IPC分类号： H01L21/316 ; H01L21/76 ; H01L21/762 ; H01L27/08 ; H01L27/105
摘要：
A method of providing thick and thin oxide structures reduces step changes between a core region and a peripheral region on an integrated circuit. Thin LOCOS structures are provided in a core region of a flash memory device, and thick LOCOS structures are provided in a peripheral region of the flash memory device. The device and process are not as susceptible to "race track" problems, "oxide" bump problems, and "stringer" problems. The process utilizes two separate nitride or hard mask layers.
公开/授权文献
- USD374298S Light with flexible body 公开/授权日：1996-10-01
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