发明授权
- 专利标题： High aspect ratio contact
- 专利标题（中）： 高宽比接触
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申请号： US206744申请日： 1998-12-07
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公开(公告)号： US5968278A公开(公告)日： 1999-10-19
- 发明人: Bao-Ru Young , Chia-Shiung Tsai , Wen-Chuan Chiang
- 申请人： Bao-Ru Young , Chia-Shiung Tsai , Wen-Chuan Chiang
- 申请人地址： TWX Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company Ltd.
- 当前专利权人地址： TWX Hsin-Chu
- 主分类号： H01L21/311
- IPC分类号： H01L21/311 ; H01L21/768 ; B08B6/00
摘要：
An improved etching procedure that uses three processing steps to vastly improve HAR opening profile and improved under-layer selectivity. A new three sequence etching process is provided during which a new three-gas plasma etch is to be used. This new etching sequence is preceded by a new main etch that uses three gasses and followed by a new over-etch procedure that uses the same three gasses and etching conditions as the new main etch.
公开/授权文献
- US5479915A Heating device for gaseous fuels 公开/授权日：1996-01-02
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