Invention Grant
- Patent Title: Aluminum-containing films derived from using hydrogen and oxygen gas in sputter deposition
- Patent Title (中): 在溅射沉积中使用氢和氧气的含铝膜
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Application No.: US892718Application Date: 1997-07-15
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Publication No.: US5969423APublication Date: 1999-10-19
- Inventor: Kanwal K. Raina , David H. Wells
- Applicant: Kanwal K. Raina , David H. Wells
- Applicant Address: ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: ID Boise
- Main IPC: C23C14/00
- IPC: C23C14/00 ; C23C14/18 ; H01L21/285 ; H01L21/3205 ; H01L29/45 ; H01L29/49 ; H01L23/48
Abstract:
An aluminum-containing film having an oxygen content within the film. The aluminum-containing film is formed by introducing hydrogen gas and oxygen gas along with argon gas into a sputter deposition vacuum chamber during the sputter deposition of aluminum or aluminum alloys onto a semiconductor substrate. The alumininum-containing film so formed is hillock-free and has low resistivity, relatively low roughness compared to pure aluminum, good mechanical strength, and low residual stress.
Information query
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