Invention Grant
- Patent Title: Field emission cathode and cleaning method therefor
- Patent Title (中): 场发射阴极及其清洗方法
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Application No.: US827255Application Date: 1997-03-28
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Publication No.: US5969467APublication Date: 1999-10-19
- Inventor: Fumihiko Matsuno
- Applicant: Fumihiko Matsuno
- Applicant Address: JPX Tokyo
- Assignee: NEC Corporation
- Current Assignee: NEC Corporation
- Current Assignee Address: JPX Tokyo
- Priority: JPX8-076083 19960329
- Main IPC: H01J9/44
- IPC: H01J9/44 ; H01J1/304 ; H01J3/02 ; H01J3/18 ; H01J31/12 ; H01J1/30 ; H01J19/22
Abstract:
A field emission cathode includes a first electron-emitting structure having a first cathode electrode (3), a first gate electrode (5), a first insulating layer (4) separating the first cathode electrode (3) from the first gate electrode (5), and at least one first emitter tip (9) disposed in a hole formed in the first gate electrode (5) and the first insulating layer (4) to expose a portion of the first cathode electrode (3); and a second electron-emitting structure surrounding and insulated from the first electron-emitting structure wherein the second electron-emitting structure has a second cathode electrode (6), a second gate electrode (8), a second insulating layer (7) separating the second cathode electrode (6) from the second gate electrode (8), and at least one second emitter tip (10) disposed in a hole formed in the second gate electrode (8) and the second insulating layer (7) to expose a portion of the second cathode electrode (6).
Public/Granted literature
- US5280192A Three-dimensional memory card structure with internal direct chip attachment Public/Granted day:1994-01-18
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