Invention Grant
- Patent Title: Solid state image sensing device
- Patent Title (中): 固态摄像装置
-
Application No.: US774010Application Date: 1996-12-26
-
Publication No.: US5969759APublication Date: 1999-10-19
- Inventor: Michihiro Morimoto
- Applicant: Michihiro Morimoto
- Applicant Address: JPX Tokyo
- Assignee: NEC Corporation
- Current Assignee: NEC Corporation
- Current Assignee Address: JPX Tokyo
- Priority: JPX7-341639 19951227
- Main IPC: H01L27/148
- IPC: H01L27/148 ; H04N5/335 ; H04N5/341 ; H04N5/345 ; H04N5/369 ; H04N5/3728 ; H04N5/378 ; H04N3/14
Abstract:
By segmenting an image sensing area into a plurality of partial areas and changing the number of stages of dummy vertical electrodes to be inserted between vertical CCD registers and horizontal CCD registers, the output gate electrode, floating diffusion layer, reset gate electrode and rest drain of each horizontal CCD register can be aligned in a line to the main body of the horizontal CCD register. It is therefore possible to avoid the reduction of the transfer efficiency at the time of transferring charges, which have reached the channel under the horizontal transfer electrode, to the channel under a dummy horizontal transfer electrode.
Public/Granted literature
- US5273829A Epitaxial silicon membranes Public/Granted day:1993-12-28
Information query
IPC分类: