发明授权
- 专利标题： Field effect transistor having elevated source and drain regions and methods for manufacturing the same
- 专利标题（中）： 形成具有升高的源极和漏极区域的场效应晶体管的方法
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申请号： US64716申请日： 1998-04-23
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公开(公告)号： US5970352A公开(公告)日： 1999-10-19
- 发明人: Jun-ichi Shiozawa , Yoshitaka Tsunashima , Katsuya Okumura
- 申请人： Jun-ichi Shiozawa , Yoshitaka Tsunashima , Katsuya Okumura
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/28 ; H01L21/285 ; H01L21/336 ; H01L21/768 ; H01L29/08
摘要：
A field effect transistor is manufactured by forming an isolating structure on a semiconductor substrate to define an active area. A gate structure is formed which is insulated from a surface of the active area of the semiconductor substrate. An amorphous silicon film is formed on the gate structure, on the surface of the semiconductor substrate, and on the isolating structure. A first portion of the amorphous silicon film is converted to an epitaxial film and a second portion of the amorphous silicon film is converted to a polysilicon film. Impurities are diffused throughout the polysilicon film and into an upper surface portion of said epitaxial film. The impurity doped polysilicon film and the upper surface portion of the epitaxial film are oxidized to form oxide films and the oxide films are removed so that the epitaxial film remains at least on the active area of the semiconductor substrate. Source and drain regions of the transistor are formed in the active area of the semiconductor substrate.
公开/授权文献
- USD386270S Flexible lantern 公开/授权日：1997-11-11
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