发明授权
- 专利标题： Insulated gate type bipolar-transistor
- 专利标题（中）： 绝缘栅型双极晶体管
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申请号： US947402申请日： 1997-10-08
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公开(公告)号： US5973338A公开(公告)日： 1999-10-26
- 发明人: Naoto Okabe , Norihito Tokura , Naohito Kato
- 申请人： Naoto Okabe , Norihito Tokura , Naohito Kato
- 申请人地址： JPX Kariya
- 专利权人： Nippondenso Co., Ltd
- 当前专利权人： Nippondenso Co., Ltd
- 当前专利权人地址： JPX Kariya
- 优先权： JPX3-046710 19910312
- 主分类号： H01L29/68
- IPC分类号： H01L29/68 ; H01L29/06 ; H01L29/10 ; H01L29/739 ; H01L29/78 ; H01L29/74 ; H01L31/111
摘要：
An insulated gate type bipolar-transistor (IGBT) incorporates an excess voltage protecting function and drain voltage fixing function in a monolithic structure. Impurity concentration ND and the thickness of an n.sup.- type drain layer (3) is set so that a depletion region propagating from a p type base layer (7) reaches a p.sup.+ type drain layer at a voltage (V.sub.DSP) lower than a voltage (V.sub.DSS) at which avalanche breakdown is caused within the IGBT element when voltage is applied between the source and the drain.
公开/授权文献
- US5289772A Ink fountain apparatus for printing press 公开/授权日：1994-03-01