发明授权
- 专利标题： Converting a hydrogen silsesquioxane film to an oxide using a first heat treatment and a second heat treatment with the second heat treatment using rapid thermal processing
- 专利标题（中）： 使用第一热处理和第二热处理将氢倍半硅氧烷膜转化为氧化物，使用快速热处理
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申请号： US964580申请日： 1997-11-05
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公开(公告)号： US5976966A公开(公告)日： 1999-11-02
- 发明人: Yushi Inoue
- 申请人： Yushi Inoue
- 申请人地址： JPX
- 专利权人： Yamaha Corporation
- 当前专利权人： Yamaha Corporation
- 当前专利权人地址： JPX
- 优先权： JPX8-308786 19961105
- 主分类号： H01L21/312
- IPC分类号： H01L21/312 ; H01L21/314 ; H01L21/316 ; H01L21/768 ; H01L23/522 ; H01L21/4763
摘要：
An insulating film is formed by CVD on the surface of a semiconductor substrate formed with circuit elements such as transistors, and thereafter a hydrogen silsesquioxane resin film is formed on the insulating film by spin-coating or the like. This resin film is sequentially subjected to low temperature annealing at 400.degree. C. or lower and then to high temperature annealing at 700.degree. C. or higher. The low temperature annealing changes the resin film into a silicon oxide film, and the high temperature annealing is performed in order to make dense the film quality of the silicon oxide film. The high temperature annealing is performed by rapid thermal annealing in an oxidizing atmosphere of water vapor or the like. A CVD insulating film is formed on the densified silicon oxide film and planarized by CMP or the like, according to necessity. A contact hole is formed through the CVD insulating film, densified silicon oxide film and the insulating film, and a wiring layer is thereafter deposited.
公开/授权文献
- US5314684A Water-based fixative composition 公开/授权日：1994-05-24
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