发明授权
US5978251A Plate line driver circuit for a 1T/1C ferroelectric memory 失效
1T / 1C铁电存储器的板线驱动电路

Plate line driver circuit for a 1T/1C ferroelectric memory
摘要:
A method of driving a selected plate line segment in a 1T/1C memory, the method including the steps of logically combining an odd word line signal and an even word line signal to form a first logic signal, logically combining the first logic signal with a plate clock signal to form a second logic signal, latching the second logic signal, and driving the selected plate line segment with the latched second logic signal.
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