发明授权
- 专利标题： Layered silicon nitride deposition process
- 专利标题（中）： 分层氮化硅沉积工艺
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申请号： US977319申请日： 1997-11-24
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公开(公告)号： US5981403A公开(公告)日： 1999-11-09
- 发明人: Yi Ma , Sailesh Mansinh Merchant , Pradip Kumar Roy
- 申请人： Yi Ma , Sailesh Mansinh Merchant , Pradip Kumar Roy
- 申请人地址： NJ Murray Hill
- 专利权人： Lucent Technologies, Inc.
- 当前专利权人： Lucent Technologies, Inc.
- 当前专利权人地址： NJ Murray Hill
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/314 ; H01L21/318 ; H01L21/32 ; H01L21/762 ; H01L29/51 ; H01L21/31 ; H01L21/469
摘要：
A semiconductor device process for forming a multilayered nitride structure. The nitride is used as either isolation or as part of a dielectric structure. The deposition rate for the nitride is varied to form a multilayered structure with stress accommodation at the interface between sub-layers in the multilayer structure. In addition, the sub-layered structure reduces pin-holes and microcracks in the nitride film and improves the overall uniformity in thickness of the final nitride film.
公开/授权文献
- US5363700A Skewed axis inertial sensor assembly 公开/授权日：1994-11-15
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