发明授权
- 专利标题： Method of manufacturing SOI substrate
- 专利标题（中）： 制造SOI衬底的方法
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申请号： US886876申请日： 1997-07-02
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公开(公告)号： US5989981A公开(公告)日： 1999-11-23
- 发明人: Sadao Nakashima , Terukazu Ohno , Toshiaki Tsuchiya , Tetsushi Sakai , Shinji Nakamura , Takemi Ueki , Yuichi Kado , Tadao Takeda
- 申请人： Sadao Nakashima , Terukazu Ohno , Toshiaki Tsuchiya , Tetsushi Sakai , Shinji Nakamura , Takemi Ueki , Yuichi Kado , Tadao Takeda
- 申请人地址： JPX
- 专利权人： Nippon Telegraph and Telephone Corporation
- 当前专利权人： Nippon Telegraph and Telephone Corporation
- 当前专利权人地址： JPX
- 优先权： JPX8-176304 19960705
- 主分类号： H01L21/265
- IPC分类号： H01L21/265 ; H01L21/322
摘要：
A method of manufacturing an SOI substrate uses an SOI substrate having a first single-crystal silicon layer, an insulating layer formed on the first single-crystal silicon layer, and a second single-crystal silicon layer formed on the insulating layer. The surface of the second single-crystal silicon layer is thermally oxidized. The second single-crystal silicon layer is controlled to have a predetermined thickness by removing the thermally oxidized surface. This step controlling the second single-crystal silicon layer to have a predetermined thickness includes the step of eliminating, by annealing, a stacking fault formed by the thermal oxidation.
公开/授权文献
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