公开(公告)号：US20080199124A1

公开(公告)日：2008-08-21

申请号：US11381618

申请日：2006-05-04

申请人： Tadao Nagatsuma ,  Yuichi Kado ,  Richard Ridgway

发明人： Tadao Nagatsuma ,  Yuichi Kado ,  Richard Ridgway

IPC分类号： G02F1/295

CPC分类号： H04B10/505 ,  H04B10/5051

摘要： Optical generation and modulation is carried out in the optical domain and converted to, for example, the THz band using suitable optical/electrical conversion hardware. In accordance with one embodiment of the present invention, an electrooptic modulator is significantly overdriven to create sidebands on an optical carrier signal. An arrayed waveguide grating or other suitable filter is then used to filter the optical signal and remove the carrier signal and unwanted sidebands. The desired sidebands are then combined to create an optical signal that can be encoded with data through suitable modulation. Additional embodiments are disclosed.

摘要翻译： 光学生成和调制在光学域中进行，并且使用合适的光/电转换硬件转换成例如THz频带。 根据本发明的一个实施例，电光调制器被显着过驱动以在光载波信号上产生边带。 然后使用阵列波导光栅或其他合适的滤波器来滤波光信号并去除载波信号和不期望的边带。 然后将期望的边带组合以产生可以通过适当调制用数据编码的光信号。 公开了另外的实施例。

公开(公告)号：US5989981A

公开(公告)日：1999-11-23

申请号：US886876

申请日：1997-07-02

申请人： Sadao Nakashima ,  Terukazu Ohno ,  Toshiaki Tsuchiya ,  Tetsushi Sakai ,  Shinji Nakamura ,  Takemi Ueki ,  Yuichi Kado ,  Tadao Takeda

发明人： Sadao Nakashima ,  Terukazu Ohno ,  Toshiaki Tsuchiya ,  Tetsushi Sakai ,  Shinji Nakamura ,  Takemi Ueki ,  Yuichi Kado ,  Tadao Takeda

IPC分类号： H01L21/265 ,  H01L21/322

CPC分类号： H01L21/3226 ,  H01L21/26533

摘要： A method of manufacturing an SOI substrate uses an SOI substrate having a first single-crystal silicon layer, an insulating layer formed on the first single-crystal silicon layer, and a second single-crystal silicon layer formed on the insulating layer. The surface of the second single-crystal silicon layer is thermally oxidized. The second single-crystal silicon layer is controlled to have a predetermined thickness by removing the thermally oxidized surface. This step controlling the second single-crystal silicon layer to have a predetermined thickness includes the step of eliminating, by annealing, a stacking fault formed by the thermal oxidation.

摘要翻译： 制造SOI衬底的方法使用具有第一单晶硅层，形成在第一单晶硅层上的绝缘层和形成在绝缘层上的第二单晶硅层的SOI衬底。 第二单晶硅层的表面被热氧化。 通过去除热氧化表面，将第二单晶硅层控制为具有预定的厚度。 控制第二单晶硅层具有预定厚度的步骤包括通过退火消除由热氧化形成的堆垛层错的步骤。

公开(公告)号：US20100105323A1

公开(公告)日：2010-04-29

申请号：US12531927

申请日：2008-03-21

申请人： Ryusuke Kawano ,  Katsuyuki Ochiai ,  Mitsuru Shinagawa ,  Yuichi Kado ,  Takuji Harada ,  Hideyuki Okamoto ,  Ryoichi Matsumoto

发明人： Ryusuke Kawano ,  Katsuyuki Ochiai ,  Mitsuru Shinagawa ,  Yuichi Kado ,  Takuji Harada ,  Hideyuki Okamoto ,  Ryoichi Matsumoto

IPC分类号： H04B5/00

CPC分类号： H04B13/005

摘要： A signal electrode (11A) and a ground electrode (11B) are disposed respectively on surfaces of a case (10). In this way, the signal electrode (11A) and the ground electrode (11B) do not come into contact with any electric component, such as a transmission circuit (21), disposed inside the case (10), and thus a reduction in an electric field (Ec) induced in an electric-field transmission medium can be prevented. In addition, a certain distance between the signal electrode (11A) and the ground electrode (11B) is kept, and thus a reduction in the electric field (Ec) induced in the electric-field transmission medium can be prevented. Furthermore, the contactability between the signal electrode (11A) and the electric-field transmission medium is improved, and thus the electric field (Ec) induced in the electric-field transmission medium can be increased.

摘要翻译： 信号电极（11A）和接地电极（11B）分别设置在壳体（10）的表面上。 以这种方式，信号电极（11A）和接地电极（11B）不与布置在壳体（10）内部的诸如传输电路（21）的任何电气部件接触，因此， 可以防止在电场传输介质中感应的电场（Ec）。 此外，保持信号电极（11A）和接地电极（11B）之间的一定距离，从而可以防止在电场传输介质中感应的电场（Ec）的减小。 此外，信号电极（11A）和电场传输介质之间的接触性提高，因此可以增加在电场传输介质中感应的电场（Ec）。

公开(公告)号：US08666312B2

公开(公告)日：2014-03-04

申请号：US12531927

申请日：2008-03-21

申请人： Ryusuke Kawano ,  Katsuyuki Ochiai ,  Mitsuru Shinagawa ,  Yuichi Kado ,  Takuji Harada ,  Hideyuki Okamoto ,  Ryoichi Matsumoto

发明人： Ryusuke Kawano ,  Katsuyuki Ochiai ,  Mitsuru Shinagawa ,  Yuichi Kado ,  Takuji Harada ,  Hideyuki Okamoto ,  Ryoichi Matsumoto

IPC分类号： H04B5/00

CPC分类号： H04B13/005

摘要： A signal electrode (11A) and a ground electrode (11B) are disposed respectively on surfaces of a case (10). In this way, the signal electrode (11A) and the ground electrode (11B) do not come into contact with any electric component, such as a transmission circuit (21), disposed inside the case (10), and thus a reduction in an electric field (Ec) induced in an electric-field transmission medium can be prevented. In addition, a certain distance between the signal electrode (11A) and the ground electrode (11B) is kept, and thus a reduction in the electric field (Ec) induced in the electric-field transmission medium can be prevented. Furthermore, the contactability between the signal electrode (11A) and the electric-field transmission medium is improved, and thus the electric field (Ec) induced in the electric-field transmission medium can be increased.

摘要翻译： 信号电极（11A）和接地电极（11B）分别设置在壳体（10）的表面上。 以这种方式，信号电极（11A）和接地电极（11B）不与布置在壳体（10）内部的诸如传输电路（21）的任何电气部件接触，因此， 可以防止在电场传输介质中感应的电场（Ec）。 此外，保持信号电极（11A）和接地电极（11B）之间的一定距离，从而可以防止在电场传输介质中感应的电场（Ec）的减小。 此外，信号电极（11A）和电场传输介质之间的接触性提高，因此可以增加在电场传输介质中感应的电场（Ec）。