Invention Grant
US5991487A Silicon-based semiconductor photodetector with an improved thin optical
waveguide layer
失效
具有改进的薄光波导层的硅基半导体光电探测器
- Patent Title: Silicon-based semiconductor photodetector with an improved thin optical waveguide layer
- Patent Title (中): 具有改进的薄光波导层的硅基半导体光电探测器
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Application No.: US934891Application Date: 1997-09-22
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Publication No.: US5991487APublication Date: 1999-11-23
- Inventor: Mitsuhiro Sugiyama
- Applicant: Mitsuhiro Sugiyama
- Applicant Address: JPX Tokyo
- Assignee: NEC Corporation
- Current Assignee: NEC Corporation
- Current Assignee Address: JPX Tokyo
- Priority: JPX8-249956 19960920
- Main IPC: H01L27/14
- IPC: H01L27/14 ; G02B6/12 ; G02B6/42 ; H01L31/0232 ; H01L31/10 ; G02B6/10
Abstract:
An optical waveguide layer in a semiconductor photodetector includes a first interface in contact directly with a first insulation layer and a second interface in contact directly with a second insulation layer, wherein each of the first and second insulation layers is much lower in refractive index than any parts of the optical waveguide layer so that a light being propagated through the optical waveguide layer reflects at the first and second interfaces without any permeation into the first and second insulation layers.
Public/Granted literature
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