发明授权
- 专利标题: Method of forming electrical connections for a semiconductor device
- 专利标题(中): 形成半导体器件的电连接的方法
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申请号: US724735申请日: 1996-09-30
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公开(公告)号: US5994218A公开(公告)日: 1999-11-30
- 发明人: Shigeki Sugimoto , Katsuya Okumura
- 申请人: Shigeki Sugimoto , Katsuya Okumura
- 申请人地址: JPX Kawasaki
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JPX Kawasaki
- 主分类号: H01L23/522
- IPC分类号: H01L23/522 ; H01L21/304 ; H01L21/768 ; H01L21/28
摘要:
A silicon film is deposited using low pressure chemical vapor deposition (LPCVD) to fill in openings formed in a substrate such as an insulating film. An aluminum film and a metal film are then formed on the silicon film. A thermal process is then carried out. This thermal process causes the deposited aluminum to replace the silicon in the openings because the silicon migrates to the metal and forms a metal silicide film. The aluminum which replaces the silicon in the openings has few or no voids. The metal silicide film any remaining portion of the aluminum film are then removed using CMP, for example.
公开/授权文献
- US2072459A Air bag 公开/授权日:1937-03-02