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349 条记录 (耗时 0.03 秒)

    Method of forming contact windows in semiconductor devices
    1.
    发明授权
    Method of forming contact windows in semiconductor devices 失效
    在半导体器件中形成接触窗的方法

    公开(公告)号：US5356834A

    公开(公告)日：1994-10-18

    申请号：US35656

    申请日：1993-03-23

    申请人： Shigeki Sugimoto ,  Katsuya Okumura

    发明人： Shigeki Sugimoto ,  Katsuya Okumura

    IPC分类号： H01L21/60 ,  H01L21/768 ,  H01L21/8242 ,  H01L21/441

    CPC分类号： H01L27/10852 ,  H01L21/76804 ,  H01L21/76831 ,  H01L21/76897 ,  Y10S148/133

    摘要： A manufacturing method of semiconductor devices according to this invention, comprises the step of forming pattern portions containing internal wiring layers on a semiconductor substrate, the step of forming interlayer insulating films on said semiconductor substrate, the step of forming an opening portion in said interlayer insulating films so as to allow the pattern portions and the substrate to appear, and the step of forming a sidewall insulating film on the sidewall of the pattern portions appearing in the opening portion.

    摘要翻译： 根据本发明的半导体器件的制造方法包括在半导体衬底上形成包含内部布线层的图案部分的步骤，在所述半导体衬底上形成层间绝缘膜的步骤，在所述层间绝缘体中形成开口部分的步骤 以使图形部分和基板出现，以及在出现在开口部分的图案部分的侧壁上形成侧壁绝缘膜的步骤。

    Method of forming electrical connections for a semiconductor device
    2.
    发明授权
    Method of forming electrical connections for a semiconductor device 失效
    形成半导体器件的电连接的方法

    公开(公告)号：US5994218A

    公开(公告)日：1999-11-30

    申请号：US724735

    申请日：1996-09-30

    申请人： Shigeki Sugimoto ,  Katsuya Okumura

    发明人： Shigeki Sugimoto ,  Katsuya Okumura

    IPC分类号： H01L23/522 ,  H01L21/304 ,  H01L21/768 ,  H01L21/28

    CPC分类号： H01L21/76877

    摘要： A silicon film is deposited using low pressure chemical vapor deposition (LPCVD) to fill in openings formed in a substrate such as an insulating film. An aluminum film and a metal film are then formed on the silicon film. A thermal process is then carried out. This thermal process causes the deposited aluminum to replace the silicon in the openings because the silicon migrates to the metal and forms a metal silicide film. The aluminum which replaces the silicon in the openings has few or no voids. The metal silicide film any remaining portion of the aluminum film are then removed using CMP, for example.

    摘要翻译： 使用低压化学气相沉积（LPCVD）沉积硅膜以填充形成在诸如绝缘膜的衬底中的开口。 然后在硅膜上形成铝膜和金属膜。 然后进行热处理。 该热处理使沉积的铝取代了开口中的硅，因为硅迁移到金属并形成金属硅化物膜。 在开口中替代硅的铝很少或没有空隙。 然后使用CMP除去铝膜的任何剩余部分的金属硅化物膜。