发明授权
- 专利标题： Localized lattice-mismatch-accomodation dislocation network epitaxy
- 专利标题（中）： 局部晶格错配 - 位错网络外延
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申请号： US438217申请日： 1995-05-09
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公开(公告)号： US5997638A公开(公告)日： 1999-12-07
- 发明人: Matthew Warren Copel , Michael Horn von Hoegen , Francoise Isabelle Kolmer Le Goues , Rudolf Maria Tromp
- 申请人： Matthew Warren Copel , Michael Horn von Hoegen , Francoise Isabelle Kolmer Le Goues , Rudolf Maria Tromp
- 申请人地址： NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： NY Armonk
- 主分类号： C30B23/02
- IPC分类号： C30B23/02 ; C30B25/02 ; C30B25/18
摘要：
The present invention is a layered structures of substantially-crystalline semiconductor materials and processes for making such structures. More particularly, the invention epitaxial grows a substantially-crystalline layer of a second elemental semiconductor material on a substantially-crystalline first semiconductor material different from the second material in which there is a significant mismatch in at least one dimension between the crystal-lattice structures of the two materials.
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