发明授权
- 专利标题： High performance MOSFET device with raised source and drain
- 专利标题（中）： 高性能MOSFET器件，具有升高的源极和漏极
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申请号： US24840申请日： 1998-02-17
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公开(公告)号： US5998835A公开(公告)日： 1999-12-07
- 发明人: Toshiharu Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak , William H. Ma , Jack A. Mandelman
- 申请人： Toshiharu Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak , William H. Ma , Jack A. Mandelman
- 申请人地址： NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： NY Armonk
- 主分类号： H01L21/225
- IPC分类号： H01L21/225 ; H01L21/336 ; H01L29/78 ; H01L29/50
摘要：
A MOSFET device and a method of manufacturing the device. The device has a trench formed in a silicon substrate. The channel of the device is at the bottom of the trench. Diffusion layers are formed adjacent to opposite sides of the trench. Each diffusion layer is connected to the edge of the device channel by extending the diffusion layer along the side wall of the trench and under a portion of the trench.
公开/授权文献
- USD360824S Inflatable specimen receptacle 公开/授权日：1995-08-01