发明授权
US05998855A Bipolar power transistor with buried base and interdigitated geometry
失效
双极功率晶体管，具有埋地和交叉几何形状
- 专利标题： Bipolar power transistor with buried base and interdigitated geometry
- 专利标题（中）： 双极功率晶体管，具有埋地和交叉几何形状
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申请号： US951686申请日： 1997-10-16
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公开(公告)号： US05998855A公开(公告)日： 1999-12-07
- 发明人: Davide Patti
- 申请人： Davide Patti
- 专利权人： SGS-Thomson Microelectronics S.r.l.
- 当前专利权人： SGS-Thomson Microelectronics S.r.l.
- 优先权： EPX96830536 19961018
- 主分类号： H01L21/331
- IPC分类号： H01L21/331 ; H01L29/73 ; H01L29/732 ; H01L27/082 ; H01L27/102 ; H01L29/00 ; H01L31/11
摘要：
A bipolar power transistor of interdigitated geometry having a buried P type base region, a buried N type emitter region, a P type base-contact region, an N type emitter-contact region, connected to an emitter electrode and an N type connection region disposed around the emitter-contact region. The emitter region is buried within the base region in such a way that the buried emitter region and the connection region delimit a P type screen region. The transistor further includes a biasing P type region in contact with the emitter electrode, which extends up to the screen region.
公开/授权文献
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