发明授权
- 专利标题： Semiconductor memory device
- 专利标题（中）： 半导体存储器件
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申请号： US33657申请日： 1998-03-03
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公开(公告)号： US6002621A公开(公告)日： 1999-12-14
- 发明人: Shinji Tanaka , Koji Tanaka , Mikio Asakura , Kenichi Yasuda
- 申请人： Shinji Tanaka , Koji Tanaka , Mikio Asakura , Kenichi Yasuda
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX8-332064 19961212; JPX9-214676 19970808
- 主分类号： G11C29/24
- IPC分类号： G11C29/24 ; G11C7/00
摘要：
Normal column selection signal switching device (20) is provided to switch a signal outputted from normal column selection signal generating device (19) in response to a test-mode signal (TMC1). Even if the normal column selection signal generating device (19) outputs a signal to disable a normal column decoder (3), the normal column selection signal switching device (20) switches the signal to enable the normal column decoder (3) to operate in the test operation. Having this configuration, a semiconductor memory device enables writing of data into all the normal memory cells even after some of the normal memory cells are replaced by spare memory cells.
公开/授权文献
- US5310810A Segmented copolymers 公开/授权日：1994-05-10
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