公开(公告)号：US6002621A

公开(公告)日：1999-12-14

申请号：US33657

申请日：1998-03-03

申请人： Shinji Tanaka ,  Koji Tanaka ,  Mikio Asakura ,  Kenichi Yasuda

发明人： Shinji Tanaka ,  Koji Tanaka ,  Mikio Asakura ,  Kenichi Yasuda

IPC分类号： G11C29/24 ,  G11C7/00

CPC分类号： G11C29/24

摘要： Normal column selection signal switching device (20) is provided to switch a signal outputted from normal column selection signal generating device (19) in response to a test-mode signal (TMC1). Even if the normal column selection signal generating device (19) outputs a signal to disable a normal column decoder (3), the normal column selection signal switching device (20) switches the signal to enable the normal column decoder (3) to operate in the test operation. Having this configuration, a semiconductor memory device enables writing of data into all the normal memory cells even after some of the normal memory cells are replaced by spare memory cells.

摘要翻译： 提供正常列选择信号切换装置（20）以响应于测试模式信号（TMC1）切换从正常列选择信号发生装置（19）输出的信号。 即使正常列选择信号生成装置（19）输出禁止通常的列解码器（3）的信号，通常的列选择信号切换装置（20）切换信号，使通常的列解码器（3）能够工作 测试操作。 具有这种配置，半导体存储器件即使在由备用存储器单元代替一些正常存储器单元之后，也能够将数据写入所有正常存储单元。

公开(公告)号：US09797034B2

公开(公告)日：2017-10-24

申请号：US13498057

申请日：2010-09-24

申请人： Yoshihiro Gotoh ,  Shinji Tanaka ,  Tsukasa Azuma

发明人： Yoshihiro Gotoh ,  Shinji Tanaka ,  Tsukasa Azuma

IPC分类号： C22C38/02 ,  C22C38/04 ,  C22C38/44 ,  C22C38/08 ,  C21D6/00 ,  C22C38/46 ,  C22C38/00

CPC分类号： C22C38/44 ,  C21D6/00 ,  C21D6/001 ,  C22C38/001 ,  C22C38/008 ,  C22C38/02 ,  C22C38/04 ,  C22C38/46

摘要： A high strength and high toughness cast steel material of the invention has a composition comprising 0.10 to 0.20% by mass of C, 0.10 to 0.50% by mass of Si, 0.40 to 1.20% by mass of Mn, 2.00 to 3.00% by mass of Ni, 0.20 to 0.70% by mass of Cr, and 0.10 to 0.50% by mass of Mo, and further comprising Fe and unavoidable impurities. The high strength and high toughness cast steel material of the invention is produced by subjecting an ingot having the above composition to annealing at 1,000 to 1,100° C., quenching at 850 to 950° C., tempering at 610 to 670° C., and then, if desired, stress-relief annealing at less than 610° C.

公开(公告)号：US09512507B2

公开(公告)日：2016-12-06

申请号：US14115062

申请日：2012-06-27

申请人： Shinji Tanaka ,  Keiichiro Oishi ,  Hiroharu Ogawa

发明人： Shinji Tanaka ,  Keiichiro Oishi ,  Hiroharu Ogawa

IPC分类号： C22C9/04 ,  C22F1/08

CPC分类号： C22C9/04 ,  C22F1/08

摘要： Provided are a silver-white copper alloy which has superior mechanical properties such as hot workability, cold workability, or press property, color fastness, bactericidal and antibacterial properties, and Ni allergy resistance; and a method of producing such a silver-white copper alloy. The silver-white copper alloy includes 51.0 mass % to 58.0 mass % of Cu; 9.0 mass % to 12.5 mass % of Ni; 0.0003 mass % to 0.010 mass % of C; 0.0005 mass % to 0.030 mass % of Pb; and the balance of Zn and inevitable impurities, in which a relationship of 65.5≦[Cu]+1.2×[Ni]≦70.0 is satisfied between a content of Cu [Cu] (mass %) and a content of Ni [Ni] (mass %). In a metal structure thereof, an area ratio of β phases dispersed in an α-phase matrix is 0% to 0.9%.

摘要翻译： 提供具有优异的机械性能如热加工性，冷加工性或冲压性，耐色牢度，杀菌和抗菌性能以及耐镍过敏性的银白铜合金。 以及制造这种银白铜合金的方法。 银白色铜合金含有Cu：51.0质量％〜58.0质量％ 9.0质量％〜12.5质量％的Ni; 0.0003质量％〜0.010质量％ 0.0005质量％至0.030质量％的Pb; 并且在Cu [Cu]（质量％）的含量与Ni [Ni]（含量）的含量之间满足65.5≤[Cu] + 1.2×[Ni]≤70.0的关系的Zn和不可避免的杂质的平衡 质量％）。 在其金属结构中，分散在α相基体中的β相的面积比为0〜0.9％。

公开(公告)号：US20130323114A1

公开(公告)日：2013-12-05

申请号：US13985729

申请日：2012-02-14

申请人： Yoshiharu Miyabe ,  Mamoru Mizusawa ,  Shinji Tanaka

发明人： Yoshiharu Miyabe ,  Mamoru Mizusawa ,  Shinji Tanaka

IPC分类号： C22C9/06

CPC分类号： C22C9/06 ,  B21J1/003 ,  C22C1/02 ,  C22F1/08

摘要： The present invention relates to a high-strength copper alloy forging material having properties of high hardness, high strength and high thermal conductivity.The high-strength copper alloy forging material contains, in mass %, 3 to 7.2% of Ni, 0.7 to 1.8% of Si, 0.02 to 0.35% of Zr and 0.002 to 0.05% of P, and further contains 1.5% or less of one or two or more of Cr, Mn and Zn in total, as needed, whereby appropriate amounts of Zr and P act to cause cracks to be less likely to occur in the material during working or heat treatment. After the working and the heat treatment, the forging material of the invention can have properties of high hardness, high strength and high thermal conductivity, and can be suitably used for resin injection mold materials, aircraft components and the like.

摘要翻译： 本发明涉及具有高硬度，高强度和高导热性的高强度铜合金锻造材料。 高强度铜合金锻造材料以质量％计含有3〜7.2％的Ni，0.7〜1.8％的Si，0.02〜0.35％的Zr和0.002〜0.05％的P，进一步含有1.5％以下的 根据需要，总共含有一种或两种以上的Cr，Mn和Zn，由此适当量的Zr和P起作用以在加工或热处理期间不太可能在材料中发生裂纹。 在加工和热处理之后，本发明的锻造材料可以具有高硬度，高强度和高导热性的特性，并且可以适用于树脂注射模具材料，飞行器部件等。

公开(公告)号：US08354298B2

公开(公告)日：2013-01-15

申请号：US13368550

申请日：2012-02-08

申请人： Shinji Tanaka

发明人： Shinji Tanaka

IPC分类号： H01L21/50

CPC分类号： H01L25/0657 ,  H01L23/13 ,  H01L23/3677 ,  H01L23/49816 ,  H01L23/49822 ,  H01L24/16 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/92 ,  H01L2224/04042 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48101 ,  H01L2224/48227 ,  H01L2224/48229 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2224/81801 ,  H01L2224/81986 ,  H01L2224/831 ,  H01L2224/83192 ,  H01L2224/92225 ,  H01L2224/92227 ,  H01L2224/92242 ,  H01L2224/92247 ,  H01L2225/06513 ,  H01L2225/06589 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/30107 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A semiconductor device of the present invention comprises a substrate and a first semiconductor element. The substrate comprises an inner layer conductor and a cavity comprising the bottom surface on which a part of the inner layer conductor is exposed. The first semiconductor element contacts, in the cavity, the inner layer conductor directly or via a good heat conductor material.

摘要翻译： 本发明的半导体器件包括衬底和第一半导体元件。 衬底包括内层导体和包括内表面导体的一部分露出的底表面的空腔。 第一半导体元件在空腔中直接或经由良好的导热材料接触内层导体。

公开(公告)号：US20120295101A1

公开(公告)日：2012-11-22

申请号：US13521406

申请日：2011-01-18

申请人： Shinji Tanaka

发明人： Shinji Tanaka

IPC分类号： H01L31/052 ,  H01L31/18 ,  G02B5/08 ,  B32B27/20

CPC分类号： C08J7/042 ,  C08J2367/02 ,  C08J2423/02 ,  Y10T428/265 ,  Y10T428/2848

摘要： The present invention provides a film for a solar cell back sheet including: a substrate film; a white layer on at least one surface of the substrate film; and an adhesive protective layer, the white layer being formed by applying an aqueous composition for the white layer including a white pigment, a first aqueous binder and an inorganic oxide filler to at least one surface of the substrate film, and the adhesive protective layer being formed by applying an aqueous composition for the adhesive protective layer including a second aqueous binder, and which has excellent production efficiency, a white pigment uniformly present in the layers, and excellent adhesiveness between the respective layers, and a producing method of the film for a solar cell back sheet.

摘要翻译： 本发明提供一种太阳能电池背板用薄膜，其特征在于，包括：基板薄膜; 在所述基底膜的至少一个表面上的白色层; 和粘合保护层，所述白色层通过将白色颜料，第一含水粘合剂和无机氧化物填料的白色层用水性组合物涂布在所述基材膜的至少一个表面上而形成，所述粘合保护层为 通过涂布含有第二水性粘合剂的粘合保护层的水性组合物，其生产效率优异，层中均匀存在的白色颜料以及各层之间的优异的粘合性，以及制备方法 太阳能电池背板。

公开(公告)号：US20120220780A1

公开(公告)日：2012-08-30

申请号：US13499404

申请日：2010-10-01

申请人： Masato Kitamura ,  Shinji Tanaka

发明人： Masato Kitamura ,  Shinji Tanaka

IPC分类号： C07D213/79 ,  C07D313/04 ,  C07D311/58 ,  C07D307/79 ,  C07D309/04 ,  C07D307/06

CPC分类号： C07B53/00 ,  B01J31/2217 ,  B01J31/2243 ,  B01J31/2295 ,  B01J2231/32 ,  B01J2231/324 ,  B01J2531/0266 ,  B01J2531/821 ,  C07D213/79 ,  C07D307/06 ,  C07D307/79 ,  C07D309/04 ,  C07D311/04

摘要： Disclosed are: a ligand for an asymmetric synthesis catalyst; and a process for producing an α-alkenyl cyclic compound using the ligand. Specifically disclosed are: a ligand for an asymmetric synthesis catalyst, which is represented by any one of formulae (1) to (4) [wherein R1 represents —Cl or —Br; R2 represents —CH3 or —CF3; and R3 represents —CH2—CH═CH2 or —H]; and a process for producing an α-alkenyl cyclic compound using the ligand.

摘要翻译： 公开了：不对称合成催化剂的配体; 以及使用该配体生产α-烯基环状化合物的方法。 具体公开的是：不对称合成催化剂的配体，其由式（1）至（4）中的任何一个表示[其中R 1表示-Cl或-Br; R 2表示-CH 3或-CF 3; 并且R 3表示-CH 2 -CH = CH 2或-H]; 以及使用该配体生产α-烯基环状化合物的方法。

公开(公告)号：US07833379B2

公开(公告)日：2010-11-16

申请号：US10522392

申请日：2003-07-25

申请人： Kikuo Matsuoka ,  Shinji Tanaka ,  Yasuyo Sano ,  Toshihiro Takai ,  Kenichi Mizoguchi ,  Hideki Usami ,  Tomoaki Haruta

发明人： Kikuo Matsuoka ,  Shinji Tanaka ,  Yasuyo Sano ,  Toshihiro Takai ,  Kenichi Mizoguchi ,  Hideki Usami ,  Tomoaki Haruta

IPC分类号： B23B38/04 ,  B26D7/10

CPC分类号： B29C51/32 ,  B26D7/27 ,  B26F1/40 ,  B26F2001/4427 ,  B26F2210/06 ,  B29C51/04 ,  B29C51/10 ,  B29C51/14 ,  B29C2791/006 ,  B29L2031/712 ,  B32B27/18 ,  B65D81/267 ,  Y10T83/041 ,  Y10T83/0414 ,  Y10T83/0429 ,  Y10T83/283 ,  Y10T156/1052 ,  Y10T156/1054 ,  Y10T156/1313 ,  Y10T428/13 ,  Y10T428/1334 ,  Y10T428/1352

摘要： An end face of an intermediate layer of a multilayer structure is stably covered by surface resin layers at a time of cutting the multilayer structure. A cutting method of the multilayer structure 10 includes the steps of: compressing and deforming the multilayer structure, while extending respective layers 11, 12, 13 of the multilayer structure to provide a thin thickness portion, so that an upper layer bites into a lower layer by pushing a push cutter 15, by a predetermined amount, into the multilayer structure supported by a cutter receiving portion 14, in a fused state of at least one of the resin layers forming the multilayer structure; and push-cutting the compressed thin thickness portion S till the push cutter abuts against the cutter receiving portion so as to converge an intermediate layer 11 and surface resin layers 12, 13 of the multilayer structure to the abutting portion A of the push cutter 15 and the cutter receiving portion 14.

摘要翻译： 在切割多层结构时，多层结构的中间层的端面被表面树脂层稳定地覆盖。 多层结构10的切割方法包括以下步骤：压缩和变形多层结构，同时延伸多层结构的各层11,12,13，以提供薄的厚度部分，使得上层咬入下层 通过将推动切割器15按预定量推入由切割器接收部分14支撑的多层结构中，在至少一个形成多层结构的树脂层的熔融状态下; 并推压压缩的薄壁部分S，直到推动切割器抵靠刀具接收部分，以将多层结构的中间层11和表面树脂层12,13会聚到推动切割器15的邻接部分A，并且 刀具接收部分14。

公开(公告)号：US20080318156A1

公开(公告)日：2008-12-25

申请号：US12162089

申请日：2006-02-16

申请人： Shinji Tanaka ,  Christopher K. Ober

发明人： Shinji Tanaka ,  Christopher K. Ober

IPC分类号： G03C1/73 ,  G03F7/20

CPC分类号： G03F7/004 ,  C07C41/22 ,  C07C41/48 ,  C07C41/52 ,  C07C43/303 ,  C07C67/14 ,  C07C69/753 ,  C07C2603/74 ,  C07H9/04 ,  C07H15/18 ,  C07J9/005 ,  G03F7/0392 ,  C07C43/192 ,  C07C43/30

摘要： Disclosed are glass photoresists generated from adamantane derivatives containing acetal and/or ester moieties as novel high-performance photoresist materials. Some of the disclosed adamantane-based glass resists have a tripodal structure and other disclosed adamantane-based glass resists include one or more cholic groups. The disclosed adamantane derivatives can be synthesized from starting materials which are commercially available. By way of example only, one of many disclosed amorphous glass photoresists has the following structure:

摘要翻译： 公开了由含有缩醛和/或酯部分的金刚烷衍生物生成的作为新型高性能光致抗蚀剂材料的玻璃光致抗蚀剂。 所公开的金刚烷基玻璃抗蚀剂中的一些具有三峰结构，并且其它公开的金刚烷基玻璃抗蚀剂包括一个或多个胆碱基团。 所公开的金刚烷衍生物可以从可商购的原料合成。 仅作为示例，许多公开的无定形玻璃光致抗蚀剂之一具有以下结构：

公开(公告)号：US20080236881A1

公开(公告)日：2008-10-02

申请号：US12056705

申请日：2008-03-27

申请人： Shinji Tanaka

发明人： Shinji Tanaka

IPC分类号： H05K1/02 ,  H05K3/42

CPC分类号： H05K1/0219 ,  H05K3/0047 ,  H05K3/427 ,  H05K3/429 ,  H05K3/4611 ,  H05K3/4652 ,  H05K2201/0959 ,  H05K2201/09809 ,  H05K2201/10545 ,  H05K2203/1476 ,  Y10T29/49165

摘要： A multilayer printed wiring board includes a first insulating layer, a pair of second insulating layers sandwiching therebetween the first insulating layer, a pair of internal-layer wiring trace formed between the first insulating layer and the second insulating layer, and an external-layer wiring trace formed on the exposed surface of the second insulating layer. A hollow cylindrical via-plug is formed on the inner wall of a first through-hole penetrating through the first insulating layer and connects together the internal-layer wiring traces with each other. A second via-plug formed inside the first via and isolated therefrom by insulating resin connects together the external-layer wiring traces.

摘要翻译： 多层印刷布线板包括第一绝缘层，夹在其间的一对第二绝缘层，第一绝缘层，形成在第一绝缘层和第二绝缘层之间的一对内层布线迹线，以及外部布线 痕迹形成在第二绝缘层的暴露表面上。 在穿过第一绝缘层的第一通孔的内壁上形成中空的圆柱形通孔，并将内层布线迹线彼此连接在一起。 形成在第一通孔内部并通过绝缘树脂隔离的第二通孔将外部层布线迹线连接在一起。