发明授权
- 专利标题： Semiconductor device and process for production thereof
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US138011申请日： 1998-08-21
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公开(公告)号： US6005291A公开(公告)日： 1999-12-21
- 发明人: Kenichi Koyanagi , Kunihiro Fujii , Tatsuya Usami , Koji Kishimoto
- 申请人： Kenichi Koyanagi , Kunihiro Fujii , Tatsuya Usami , Koji Kishimoto
- 申请人地址： JPX Tokyo
- 专利权人： NEC Corporation
- 当前专利权人： NEC Corporation
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX9-226669 19970822
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/312 ; H01L21/314 ; H01L21/768 ; H01L23/522 ; H01L23/532 ; H01L23/48 ; H01L23/52 ; H01L29/40
摘要：
A semiconductor device comprising an insulating film at least partially containing a fluorine-containing film, formed above a semiconductor substrate, and a titanium nitride film formed on the insulating film. The above titanium film functions as a barrier metal film for barriering the diffusion of fluorine (F) atoms.
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