发明授权
- 专利标题： Reduction of reflection by amorphous carbon
- 专利标题（中）： 通过无定形碳减少反射
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申请号： US841787申请日： 1997-05-05
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公开(公告)号： US6007732A公开(公告)日： 1999-12-28
- 发明人: Koichi Hashimoto , Toshiyuki Ohtsuka , Fumihiko Shinpuku , Daisuke Matsunaga , Takayuki Enda
- 申请人： Koichi Hashimoto , Toshiyuki Ohtsuka , Fumihiko Shinpuku , Daisuke Matsunaga , Takayuki Enda
- 申请人地址： JPX Kawasaki
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX5-68717 19930326
- 主分类号： H01L21/027
- IPC分类号： H01L21/027 ; H01L21/311 ; H01L21/3213 ; H01L21/302
摘要：
A pattern forming method having a step of forming an amorphous carbon film on a patterning layer formed on a substrate, a step of forming a photoresist film on the amorphous carbon film, a step of selectively exposing and developing the photoresist film to form a photoresist pattern, and a step of successively dry-etching the amorphous carbon film and the patterning layer by using the photoresist film as an etching mask. Desired optical constants of an amorphous carbon film formed by sputtering can be obtained by controlling a substrate temperature and other parameters.
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