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公开(公告)号：US5656128A
公开(公告)日：1997-08-12
申请号：US216963
申请日：1994-03-24
IPC分类号： H01L21/027 , H01L21/311 , H01L21/3213 , H01L21/306
CPC分类号： H01L21/32139 , H01L21/0276 , H01L21/31138 , H01L21/32137 , Y10S438/95 , Y10S438/952
摘要： A pattern forming method having a step of forming an amorphous carbon film on a patterning layer formed on a substrate, a step of forming a photoresist film on the amorphous carbon film, a step of selectively exposing and developing the photoresist film to form a photoresist pattern, and a step of successively dry-etching the amorphous carbon film and the patterning layer by using the photoresist film as an etching mask. Desired optical constants of an amorphous carbon film formed by sputtering can be obtained by controlling a substrate temperature and other parameters.
摘要翻译： 具有在形成在基板上的图案化层上形成非晶碳膜的步骤的图案形成方法，在非晶碳膜上形成光致抗蚀剂膜的步骤，选择性地曝光和显影光致抗蚀剂膜以形成光致抗蚀剂图案的步骤 以及通过使用光致抗蚀剂膜作为蚀刻掩模来连续干法蚀刻非晶碳膜和图案化层的步骤。 通过溅射形成的非晶碳膜的期望光学常数可以通过控制衬底温度和其它参数来获得。
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公开(公告)号：US6007732A
公开(公告)日：1999-12-28
申请号：US841787
申请日：1997-05-05
IPC分类号： H01L21/027 , H01L21/311 , H01L21/3213 , H01L21/302
CPC分类号： H01L21/32139 , H01L21/0276 , H01L21/31138 , H01L21/32137 , Y10S438/952
摘要： A pattern forming method having a step of forming an amorphous carbon film on a patterning layer formed on a substrate, a step of forming a photoresist film on the amorphous carbon film, a step of selectively exposing and developing the photoresist film to form a photoresist pattern, and a step of successively dry-etching the amorphous carbon film and the patterning layer by using the photoresist film as an etching mask. Desired optical constants of an amorphous carbon film formed by sputtering can be obtained by controlling a substrate temperature and other parameters.
摘要翻译： 具有在形成在基板上的图案化层上形成非晶碳膜的步骤的图案形成方法，在非晶碳膜上形成光致抗蚀剂膜的步骤，选择性地曝光和显影光致抗蚀剂膜以形成光致抗蚀剂图案的步骤 以及通过使用光致抗蚀剂膜作为蚀刻掩模来连续干法蚀刻非晶碳膜和图案化层的步骤。 通过溅射形成的非晶碳膜的期望光学常数可以通过控制衬底温度和其它参数来获得。
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