发明授权
- 专利标题： Method of forming trench isolation
- 专利标题（中）： 形成沟槽隔离的方法
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申请号： US172465申请日： 1998-10-14
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公开(公告)号： US06013559A公开(公告)日： 2000-01-11
- 发明人: Kun-Lin Wu , Horng-Bor Lu
- 申请人： Kun-Lin Wu , Horng-Bor Lu
- 申请人地址： TWX Taipei
- 专利权人： United Microelectronics Corp.
- 当前专利权人： United Microelectronics Corp.
- 当前专利权人地址： TWX Taipei
- 优先权： TWX87111661 19980717
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; H01L21/76
摘要：
A method of fabricating a trench isolation structure in a semiconductor devices. First, a mask layer is formed on a substrate and patterned. Then, a trench is formed in the substrate using the mask layer as a mask. An insulating layer is formed under the mask layer to fill the trench. The insulating layer is polished to expose a portion of the mask layer and an insulating plug is left in the trench. A RTP is performed to avoid mobile ions diffuse into the substrate. There are several operating conditions for the RTP. For example the operating temperature is ranged from about 600.degree. C. to about 1300.degree. C. The duration for performing the RTP is ranged from about 5 seconds to about 5 minutes. The operating gas can be selected from one of a group of N.sub.2, O.sub.2, or N.sub.2 O. Besides, before the RTP a cleaning step is performed using SC-1 or hydrogen fluoride (HF) solution as cleaning solution.
公开/授权文献
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