公开(公告)号：US6071806A

公开(公告)日：2000-06-06

申请号：US152921

申请日：1998-09-14

Applicant: Kun-Lin Wu ,  Horng-Bor Lu

Inventor： Kun-Lin Wu ,  Horng-Bor Lu

IPC: H01L21/3105 ,  H01L21/768 ,  H01L21/4763

CPC classification number: H01L21/76825 ,  H01L21/31058 ,  H01L21/76813 ,  H01L21/76831

Abstract: A method for preventing the occurrence of poisoned trenches and vias in a dual damascene process that includes performing a densification process, such as an electron-beam process, on the surface of the exposed dielectric layer around the openings before the openings are filled with conductive material. The densified surface of the dielectric layer is able to efficiently prevent the occurrence of poisoned trenches and vias caused by the outgassing phenomena.

Abstract translation: 一种用于防止在双镶嵌工艺中发生中毒的沟槽和通孔的方法，该方法包括在开口之前的开口周围的暴露介电层的表面上进行诸如电子束工艺的致密化处理，该导电材料填充有导电材料 。 电介质层的致密表面能够有效地防止由脱气现象引起的中毒的沟槽和通孔的发生。

公开(公告)号：US5876508A

公开(公告)日：1999-03-02

申请号：US818898

申请日：1997-03-17

Applicant: Kun-Lin Wu ,  Chien-Hsien Lai ,  Horng-Bor Lu ,  Jenn-Tarng Lin

Inventor： Kun-Lin Wu ,  Chien-Hsien Lai ,  Horng-Bor Lu ,  Jenn-Tarng Lin

IPC: B08B3/02 ,  B24B37/04 ,  B24B53/007 ,  C11D3/39 ,  C11D7/06 ,  C11D7/08 ,  H01L21/306 ,  C03C25/00 ,  C23G1/02

CPC classification number: H01L21/02052 ,  B08B3/02 ,  B24B37/04 ,  B24B53/017 ,  C11D3/3947 ,  C11D7/06 ,  C11D7/08 ,  H01L21/30625 ,  Y10S438/959

Abstract: A method for effectively cleaning the slurry remnants left on a polishing pad after the completion of a chemical mechanical polish (CMP) process is provided. This method is able to substantially thoroughly clean away all of the slurry remnants left on the polishing pad. In the method of the invention, the first step is to prepare a cleaning agent which is a mixture of H.sub.2 O.sub.2, deionized water, an acid solution, and an alkaline solution mixed to a predetermined ratio. The cleaning agent is subsequently directed to a nozzle formed in the pad dresser. This allows the cleaning agent to be jetted forcibly onto the slurry remnants on the polishing pad so as to clean the slurry remnants away from the polishing pad. The cleaning agent can be provided with predetermined ratios for various kinds of slurries so that the cleaning agent can be adjusted to be either acid or alkaline in nature. This can allow an increase in the repellent force between the particles of the slurry remnants and the underlying polishing pad that is caused by the so-called zeta potential, thus allowing the slurry remnants to be more easily removed from the polishing pad.

Abstract translation: 提供了在完成化学机械抛光（CMP）工艺之后有效地清洁留在抛光垫上的浆料残余物的方法。 该方法能够基本上彻底地清除留在抛光垫上的所有浆料残余物。 在本发明的方法中，第一步是制备一种清洗剂，它是以预定比例混合的H 2 O 2，去离子水，酸性溶液和碱性溶液的混合物。 随后将清洁剂引导到形成在修整器中的喷嘴。 这样可以将洗涤剂强制地喷射到抛光垫上的浆料残余物上，以清除离开抛光垫的浆料残余物。 可以为各种浆料提供预定比例的清洗剂，使清洗剂本质上可以调节为酸性或碱性。 这可以增加由所谓的ζ电位引起的浆料残留物的颗粒和下面的抛光垫之间的驱除力，从而使浆料残余物更容易从抛光垫上去除。

公开(公告)号：US6057248A

公开(公告)日：2000-05-02

申请号：US897282

申请日：1997-07-21

Applicant: Kun-Lin Wu ,  Horng-Bor Lu

Inventor： Kun-Lin Wu ,  Horng-Bor Lu

IPC: H01L21/306 ,  H01L21/4763

CPC classification number: H01L21/02065

Abstract: A method of removing residual contaminants in grooves of an alignment mark of a semiconductor wafer after a chemical-mechanical polishing is disclosed. The method includes scrubbing the semiconductor wafer using conventional scrubbing technique. Next, the semiconductor wafer is etched back to remove a damaged layer, which is formed during the chemical-mechanical polishing, over the semiconductor wafer. Finally, the semiconductor wafer is cleaned, for example, by NH.sub.4 OH/H.sub.2 O.sub.2 /DI, agitated by a megasonic source, thereby substantially removing the residual contaminants from the alignment mark.

Abstract translation: 公开了一种在化学机械抛光之后去除半导体晶片的对准标记的凹槽中残留污染物的方法。 该方法包括使用常规洗涤技术擦洗半导体晶片。 接下来，将半导体晶片回蚀刻以除去在化学机械抛光期间形成的受损层在半导体晶片上。 最后，例如通过NH 4 OH / H 2 O 2 / DI清洗半导体晶片，用兆声波源进行搅拌，从而基本上从对准标记中除去残留的污染物。

公开(公告)号：US6030892A

公开(公告)日：2000-02-29

申请号：US866131

申请日：1997-05-30

Applicant: Kun-Lin Wu ,  Hao-Kuang Chiu ,  Horng-Bor Lu ,  Jenn-Tarng Lin

Inventor： Kun-Lin Wu ,  Hao-Kuang Chiu ,  Horng-Bor Lu ,  Jenn-Tarng Lin

IPC: H01L21/3105 ,  H01L21/4763

CPC classification number: H01L21/31053

Abstract: A method of preventing overpolishing in a chemical-mechanical polishing operation includes using a spin-on polymer material instead of spin-on glass as the local planarization material. The spin-on polymer layer is further used as a polishing stop layer so as to prevent damage to components due to overpolishing, because the polishing rate of the spin-on polymer layer in a chemical-mechanical polishing operation is, in general, lower than the polishing rate of the silicon dioxide layer formed using plasma enhanced chemical vapor deposition.

Abstract translation: 在化学机械抛光操作中防止过度抛光的方法包括使用旋涂聚合物材料代替旋涂玻璃作为局部平坦化材料。 旋涂聚合物层进一步用作抛光停止层，以防止由于过度抛光而损坏组分，因为化学机械抛光操作中的旋涂聚合物层的抛光速率通常低于 使用等离子体增强化学气相沉积形成的二氧化硅层的抛光速率。

公开(公告)号：US06013559A

公开(公告)日：2000-01-11

申请号：US172465

申请日：1998-10-14

Applicant: Kun-Lin Wu ,  Horng-Bor Lu

Inventor： Kun-Lin Wu ,  Horng-Bor Lu

IPC: H01L21/762 ,  H01L21/76

CPC classification number: H01L21/76224 ,  Y10S148/05

Abstract: A method of fabricating a trench isolation structure in a semiconductor devices. First, a mask layer is formed on a substrate and patterned. Then, a trench is formed in the substrate using the mask layer as a mask. An insulating layer is formed under the mask layer to fill the trench. The insulating layer is polished to expose a portion of the mask layer and an insulating plug is left in the trench. A RTP is performed to avoid mobile ions diffuse into the substrate. There are several operating conditions for the RTP. For example the operating temperature is ranged from about 600.degree. C. to about 1300.degree. C. The duration for performing the RTP is ranged from about 5 seconds to about 5 minutes. The operating gas can be selected from one of a group of N.sub.2, O.sub.2, or N.sub.2 O. Besides, before the RTP a cleaning step is performed using SC-1 or hydrogen fluoride (HF) solution as cleaning solution.

Abstract translation: 一种在半导体器件中制造沟槽隔离结构的方法。 首先，在基板上形成掩模层并进行图案化。 然后，使用掩模层作为掩模在衬底中形成沟槽。 在掩模层之下形成绝缘层以填充沟槽。 抛光绝缘层以露出掩模层的一部分，并且绝缘插头留在沟槽中。 执行RTP以避免移动离子扩散到衬底中。 RTP有几种操作条件。 例如，操作温度范围为约600℃至约1300℃。执行RTP的持续时间为约5秒至约5分钟。 工作气体可以选自一组N2，O2或N2O中的一种。 此外，在RTP之前，使用SC-1或氟化氢（HF）溶液作为清洁溶液进行清洁步骤。

公开(公告)号：US06333261B1

公开(公告)日：2001-12-25

申请号：US09584697

申请日：2000-06-01

Applicant: Chi-Jung Lin ,  Jyh-J Huang ,  Horng-Bor Lu ,  Kun-Lin Wu

Inventor： Chi-Jung Lin ,  Jyh-J Huang ,  Horng-Bor Lu ,  Kun-Lin Wu

IPC: H01L2144

CPC classification number: H01L21/76843

Abstract: A semiconductor wafer includes a substrate, an aluminum layer on the substrate, an anti-reflection coating on the aluminum layer, a dielectric layer on the anti-reflection coating, and a via hole that passes through the dielectric layer and the anti-reflection coating down to a predetermined depth within the aluminum layer. A titanium layer is formed on the bottom and on the walls of the via hole. A physical vapor deposition process is then performed to form a first titanium nitride layer on the titanium layer. A chemical vapor deposition process is then performed to form a second titanium nitride layer on the first titanium nitride layer.

Abstract translation: 半导体晶片包括基板，基板上的铝层，铝层上的防反射涂层，防反射涂层上的介电层，以及穿过介电层和防反射涂层的通孔 下降到铝层内的预定深度。 在通孔的底部和壁上形成钛层。 然后进行物理气相沉积工艺以在钛层上形成第一氮化钛层。 然后进行化学气相沉积工艺以在第一氮化钛层上形成第二氮化钛层。

公开(公告)号：US06225204B1

公开(公告)日：2001-05-01

申请号：US09168226

申请日：1998-10-07

Applicant: Kun-Lin Wu ,  Horng-Bor Lu

Inventor： Kun-Lin Wu ,  Horng-Bor Lu

IPC: H01L2144

CPC classification number: H01L21/76825 ,  H01L21/76813 ,  H01L21/76814 ,  H01L21/76831

Abstract: A method for preventing the occurrence of poisoned trenches and vias in a dual damascene process that includes performing a densification process, such as an implantation process, on the surface of the exposed dielectric layer around the openings before the openings are filled with conductive material. The densified surface of the dielectric layer is able to efficiently prevent the occurrence of poisoned trenches and vias caused by the outgassing phenomena.

Abstract translation: 一种用于防止在双镶嵌工艺中发生中毒的沟槽和通孔的方法，该方法包括在开口充满导电材料之前在开口周围的暴露介电层的表面上执行诸如注入工艺的致密化过程。 电介质层的致密表面能够有效地防止由脱气现象引起的中毒的沟槽和通孔的发生。

公开(公告)号：US06180467B2

公开(公告)日：2001-01-30

申请号：US09211641

申请日：1998-12-15

Applicant: Kun-Lin Wu ,  Horng-Bor Lu

Inventor： Kun-Lin Wu ,  Horng-Bor Lu

IPC: H01L21336

CPC classification number: H01L21/76224

Abstract: A method for fabricating a shallow trench isolation in a semiconductor substrate. A mask layer is formed on the substrate. The mask layer is patterned and used as a mask in order to form a trench in the substrate. A portion of the substrate is removed to form the trench in the substrate. A liner layer is formed on the substrate exposed by the trench and optionally, an additonal liner layer is formed on the liner layer. A doped isolation layer is formed to fill the trench. A densification step is performed. The mask layer is removed. The doped isolation layer has a lower glass transition temperature so that the temperature of the densification step is reduced to about 700° C. to 1000° C.

Abstract translation: 一种用于在半导体衬底中制造浅沟槽隔离的方法。 在基板上形成掩模层。 将掩模层图案化并用作掩模，以便在衬底中形成沟槽。 去除衬底的一部分以在衬底中形成沟槽。 在由沟槽暴露的衬底上形成衬里层，并且任选地，在衬垫层上形成附加衬里层。 形成掺杂隔离层以填充沟槽。 进行致密化步骤。 去除掩模层。 掺杂隔离层具有较低的玻璃化转变温度，使得致密化步骤的温度降低至约700℃至1000℃。

公开(公告)号：US6150259A

公开(公告)日：2000-11-21

申请号：US191162

申请日：1998-11-13

Applicant: Kun-Lin Wu ,  Horng-Bor Lu

Inventor： Kun-Lin Wu ,  Horng-Bor Lu

IPC: H01L21/768 ,  H01L21/4763

CPC classification number: H01L21/76862 ,  H01L21/76843 ,  H01L21/76856

Abstract: A method for forming a metal plug is provided. The method is used to form a metal plug without a hole on a glue/barrier layer within a trench when the glue/barrier layer has been formed for a while. A substrate with a trench therein and a glue/barrier layer formed conformal to the profile of the substrate is provided. A post-treatment is performed on the glue/barrier layer to prevent moisture absorption and to make the glue/barrier become dense. The post-treatment comprises a plasma treatment or a deep UV plus laser treatment. After performing the post-treatment step, a metal layer is formed on the glue/barrier layer at least to fill in the trench. The metal layer other than that filling the trench is removed to form a metal plug.

Abstract translation: 提供一种用于形成金属插头的方法。 该方法用于当胶/阻隔层已经形成一段时间时，在沟槽内的胶/阻挡层上形成没有孔的金属塞。 提供其中具有沟槽的衬底和与衬底的轮廓保形的形成的胶/阻挡层。 在胶/阻隔层上进行后处理以防止吸湿并使胶/屏障变得致密。 后处理包括等离子体处理或深UV加激光处理。 在执行后处理步骤之后，至少在胶/阻挡层上形成金属层以填充沟槽。 去除填充沟槽以外的金属层以形成金属塞。

公开(公告)号：US6013581A

公开(公告)日：2000-01-11

申请号：US166821

申请日：1998-10-05

Applicant: Kun-Lin Wu ,  Horng-Bor Lu

Inventor： Kun-Lin Wu ,  Horng-Bor Lu

IPC: H01L21/768 ,  H05K3/00 ,  H05K3/38 ,  H05K3/46 ,  H01B13/00

CPC classification number: H01L21/76826 ,  H01L21/76813 ,  H01L21/76831 ,  H05K3/465 ,  H05K2203/0384 ,  H05K2203/095 ,  H05K3/002 ,  H05K3/388

Abstract: A method for preventing the occurrence of poisoned trenches and vias in a dual damascene process that includes performing a densification process, such as an plasma treatment, on the surface of the exposed dielectric layer around the openings before the openings are filled with conductive material. The densified surface of the dielectric layer is able to efficiently prevent the occurrence of poisoned trenches and vias caused by the outgassing phenomena.

Abstract translation: 一种用于防止在双镶嵌工艺中发生中毒的沟槽和通孔的方法，该方法包括在开口充满导电材料之前，在开口周围的暴露介电层的表面上进行致密化处理，例如等离子体处理。 电介质层的致密表面能够有效地防止由脱气现象引起的中毒的沟槽和通孔的发生。