发明授权
- 专利标题： Semiconductor device with refractory metal element
- 专利标题（中）： 具有难熔金属元件的半导体器件
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申请号： US837458申请日： 1997-04-18
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公开(公告)号： US6013926A公开(公告)日： 2000-01-11
- 发明人: Tomoki Oku , Naohito Yoshida , Shinichi Miyakuni , Toshihiko Shiga
- 申请人： Tomoki Oku , Naohito Yoshida , Shinichi Miyakuni , Toshihiko Shiga
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX8-309168 19961120
- 主分类号： H01L29/41
- IPC分类号： H01L29/41 ; H01L21/285 ; H01L21/3205 ; H01L21/335 ; H01L21/338 ; H01L29/778 ; H01L29/812 ; H03H3/02 ; H01L29/80 ; H01L31/0328 ; H01L31/112
摘要：
A semiconductor device includes a self-aligned refractory metal constituent in a recess in a semiconductor substrate and having the same plane pattern as a bottom surface of the recess. The width of the constituent is determined by the plane pattern of the recess and, accordingly, the pattern width of the constituent is easily controlled by the plane pattern of the recess.
公开/授权文献
- US4170204A Fuel injection system 公开/授权日：1979-10-09
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