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22 条记录 (耗时 0.018 秒)

    Semiconductor device
    2.
    发明申请
    Semiconductor device 审中-公开
    半导体器件

    公开(公告)号：US20060231871A1

    公开(公告)日：2006-10-19

    申请号：US11374141

    申请日：2006-03-14

    申请人： Hirotaka Amasuga ,  Toshihiko Shiga ,  Tetsuo Kunii ,  Tomoki Oku

    发明人： Hirotaka Amasuga ,  Toshihiko Shiga ,  Tetsuo Kunii ,  Tomoki Oku

    IPC分类号： H01L29/80 ,  H01L29/76 ,  H01L31/112 ,  H01L29/94 ,  H01L31/00

    CPC分类号： H01L29/475 ,  H01L21/28581 ,  H01L21/28587 ,  H01L29/42316

    摘要： A gate electrode serving as a Schottky electrode includes a TaNx layer and an Au layer. The TaNx layer serves as a barrier metal for preventing atoms from diffusing from the Au layer into a substrate. TaNx does not contain Si, and therefore has a higher humidity resistance than WSiN containing Si. Accordingly, the gate electrode has a higher humidity resistance than a conventional gate electrode including a WSiN layer. Setting a nitrogen content at less than 0.8 can prevent significant degradation in Schottky characteristics as compared to the conventional gate electrode. Setting the nitrogen content at 0.5 or less, Schottky characteristics can be improved more than in the conventional gate electrode.

    摘要翻译： 用作肖特基电极的栅电极包括TaNx层和Au层。 TaNx层用作防止原子从Au层扩散到衬底中的阻挡金属。 TaNx不含Si，因此具有比含有Si的WSiN更高的耐湿性。 因此，栅电极具有比包含WSiN层的常规栅电极更高的耐湿性。 与常规栅电极相比，氮含量小于0.8可以防止肖特基特性的显着降低。 将氮含量设定为0.5以下，与常规栅电极相比，肖特基特性可以得到改善。

    Method for manufacturing semiconductor optical device
    4.
    发明授权
    Method for manufacturing semiconductor optical device 有权
    制造半导体光学器件的方法

    公开(公告)号：US07879635B2

    公开(公告)日：2011-02-01

    申请号：US11772297

    申请日：2007-07-02

    申请人： Toshihiko Shiga ,  Hitoshi Sakuma

    发明人： Toshihiko Shiga ,  Hitoshi Sakuma

    IPC分类号： H01L21/00

    CPC分类号： B82Y20/00 ,  H01S5/1039 ,  H01S5/2009 ,  H01S5/2086 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/3063 ,  H01S5/3211 ,  H01S5/34333

    摘要： A method for manufacturing a laser diode includes: providing a semiconductor structure in which semiconductor layers are laminated; forming a waveguide ridge in the layers; forming an SiO2 film over the entire surface; forming a second resist pattern covering the SiO2 film in channels adjacent the waveguide ridge such that top surfaces of the second resist pattern in the channels are higher than the top surface of a p-GaN layer in the waveguide ridge and lower than the top surface of the SiO2 film on the top of the waveguide ridge, the second resist pattern exposing the top surface of the SiO2 film on the top of the waveguide ridge; removing the SiO2 film, using the second resist pattern as a mask, to expose the top surface of the p-GaN layer in the waveguide ridge; and forming an electrode layer on the top surface of the p-GaN layer.

    摘要翻译： 一种激光二极管的制造方法，其特征在于，具备：层叠半导体层的半导体结构体; 在层中形成波导脊; 在整个表面上形成SiO 2膜; 在与所述波导脊相邻的通道中形成覆盖所述SiO 2膜的第二抗蚀剂图案，使得所述通道中的所述第二抗蚀剂图案的顶表面高于所述波导脊中的p-GaN层的顶表面，并且低于所述波导脊的顶表面 在波导脊顶部的SiO 2膜，第二抗蚀剂图案暴露在波导脊顶部的SiO 2膜的顶表面; 使用第二抗蚀剂图案作为掩模去除SiO 2膜，以暴露波导脊中的p-GaN层的顶表面; 以及在p-GaN层的顶表面上形成电极层。

    Semiconductor device having an improved wiring or electrode structure
    7.
    发明授权
    Semiconductor device having an improved wiring or electrode structure 有权
    具有改进的布线或电极结构的半导体器件

    公开(公告)号：US07569911B2

    公开(公告)日：2009-08-04

    申请号：US11410194

    申请日：2006-04-25

    申请人： Toshihiko Shiga ,  Hitoshi Nakamura ,  Junji Tanimura

    发明人： Toshihiko Shiga ,  Hitoshi Nakamura ,  Junji Tanimura

    IPC分类号： H01L29/93

    CPC分类号： H01L21/28575 ,  H01L29/452 ,  Y10S257/928

    摘要： An ohmic electrode is formed by stacking a lower Ti layer, a diffusion preventing layer, an upper Ti layers and a metallic (Au) layer on a p-type GaAs layer. The diffusion preventing layer includes tantalum (Ta) or niobium (Nb). Thus, interdiffusion of Ga and As in the p-type GaAs layer and Au in the metallic layer can be prevented, and variation in resistivity of the ohmic electrode in a high-temperature, high-humidity environment can be suppressed.

    摘要翻译： 通过在p型GaAs层上堆叠下Ti层，扩散防止层，上Ti层和金属（Au）层来形成欧姆电极。 扩散防止层包括钽（Ta）或铌（Nb）。 因此，可以防止金属层中的p型GaAs层和Au中的Ga和As的相互扩散，并且可以抑制在高温，高湿度环境中的欧姆电极的电阻率的变化。

    Semiconductor device
    9.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08766445B2

    公开(公告)日：2014-07-01

    申请号：US13525433

    申请日：2012-06-18

    申请人： Takayuki Hisaka ,  Takahiro Nakamoto ,  Toshihiko Shiga ,  Koichiro Nishizawa

    发明人： Takayuki Hisaka ,  Takahiro Nakamoto ,  Toshihiko Shiga ,  Koichiro Nishizawa

    IPC分类号： H01L23/48

    CPC分类号： H01L23/3192 ,  H01L23/564 ,  H01L24/05 ,  H01L2224/02331 ,  H01L2224/05008 ,  H01L2224/0508 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05568 ,  H01L2224/05569 ,  H01L2224/05573 ,  H01L2224/05583 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2224/05552

    摘要： A semiconductor device includes: a semiconductor substrate; an underlying wiring on the semiconductor substrate; a resin film extending to the semiconductor substrate and the underlying wiring, and having a first opening on the underlying wiring; a first SiN film on the underlying wiring and the resin film, and having a second opening in the first opening; an upper layer wiring on the underlying wiring and part of the resin film; and a second SiN film on the upper layer wiring and the resin film, and joined to the first SiN film on the resin film. The upper layer wiring includes a Ti film, connected to the underlying wiring via the first and second openings, and an Au film on the Ti film. The first and second SiN films circumferentially protect the Ti film.

    摘要翻译： 半导体器件包括：半导体衬底; 半导体衬底上的底层布线; 延伸到半导体衬底和底层布线的树脂膜，并且在下面的布线上具有第一开口; 下面的布线和树脂膜上的第一SiN膜，并且在第一开口中具有第二开口; 底层布线上的上层布线和树脂膜的一部分; 和上层布线和树脂膜上的第二SiN膜，并与树脂膜上的第一SiN膜接合。 上层布线包括通过第一和第二开口连接到底层布线的Ti膜，以及Ti膜上的Au膜。 第一和第二SiN膜周向地保护Ti膜。