发明授权
- 专利标题: Method for growing thin films
- 专利标题(中): 生长薄膜的方法
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申请号: US682705申请日: 1996-09-25
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公开(公告)号: US6015590A公开(公告)日: 2000-01-18
- 发明人: Tuomo Suntola , Sven Lindfors
- 申请人: Tuomo Suntola , Sven Lindfors
- 申请人地址: FIX
- 专利权人: Neste Oy
- 当前专利权人: Neste Oy
- 当前专利权人地址: FIX
- 优先权: FIX945611 19941128
- 主分类号: C30B25/02
- IPC分类号: C30B25/02 ; C23C16/44 ; C23C16/455 ; C23C16/52 ; C30B25/10 ; C30B25/14 ; C30B29/46 ; C30B35/00 ; C23C16/00
摘要:
A method for growing a thin film on a substrate. A substrate is placed in a reaction space. The substrate is subjected to at least two vapor phase reactants in the form of vapor phase pulses, repeatedly and alternately. Gas within the reaction space is purged between two successive vapor phase pulses essentially entirely by use of a pump connected to the reaction space. The reaction space is purged between two successive vapor phase pulses such that less than 1% of the residual components from the first vapor phase pulse remains prior to the inflow of the second vapor phase pulse.
公开/授权文献
- USD340282S Earplug 公开/授权日:1993-10-12