发明授权
- 专利标题： Plasma processing apparatus
- 专利标题（中）： 等离子体处理装置
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申请号： US905767申请日： 1997-08-04
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公开(公告)号： US6016765A公开(公告)日： 2000-01-25
- 发明人: Yoichiro Numasawa , Shinya Hasegawa , Tsutomu Tsukada , Nobuyuki Takahashi
- 申请人： Yoichiro Numasawa , Shinya Hasegawa , Tsutomu Tsukada , Nobuyuki Takahashi
- 申请人地址： JPX Fuchu
- 专利权人： Anelva Corporation
- 当前专利权人： Anelva Corporation
- 当前专利权人地址： JPX Fuchu
- 优先权： JPX8-271387 19960920
- 主分类号： H05H1/46
- IPC分类号： H05H1/46 ; C23C16/40 ; C23C16/44 ; C23C16/50 ; C23C16/507 ; H01J37/32 ; H01L21/302 ; H01L21/3065 ; H01L21/31 ; C23C16/00
摘要：
A plasma processing apparatus is furnished with a reactor which is furnished with a susceptor 12, a reaction gas delivery mechanism which delivers reaction gas to the inside of the reactor, a pumping mechanism 24 which pumps out an interior of the reactor, and a plasma-generating mechanism. The reactor is made of metal, the plasma-generating mechanism includes an at least single-winding coil 16 which produces an induced electric field, and the coil is established within the reactor and surrounding the plasma-generating space in a state surrounded by dielectrics parts 15 and 17.
公开/授权文献
- US5281319A Carbon micro-sensor electrode and method for preparing it 公开/授权日：1994-01-25
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