发明授权
US6018263A Trigger circuit for a field-effect-controlled power semiconductor
component
失效
用于场效应控制功率半导体元件的触发电路
- 专利标题： Trigger circuit for a field-effect-controlled power semiconductor component
- 专利标题（中）： 用于场效应控制功率半导体元件的触发电路
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申请号： US906185申请日： 1997-08-04
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公开(公告)号： US6018263A公开(公告)日： 2000-01-25
- 发明人: Jenoe Tihanyi
- 申请人： Jenoe Tihanyi
- 申请人地址： DEX Munich
- 专利权人： Siemens Aktiengesellschaft
- 当前专利权人： Siemens Aktiengesellschaft
- 当前专利权人地址： DEX Munich
- 优先权： DEX19631362 19960802
- 主分类号： H03K17/082
- IPC分类号： H03K17/082 ; H03K17/687
摘要：
A trigger circuit for a field-effect-controlled power semiconductor component has a controllable gate resistor for the power semiconductor component, which has low impedance in a normal situation and is switched to high impedance in the event of a short circuit. As a result, the turn-on time in the normal situation is shortened, and limiting the gate-to-source voltage of the power semiconductor component in the short-circuit situation is made possible.
公开/授权文献
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