A method is for reading a dynamic memory and a memory implementing the method. The memory includes at least one bit line, one word line, one storage cell accessible by the bit line and the word line, and one reference line, the storage cell enabling the storage of an initial potential representing a logic information. The method includes a step for the precharging of the bit line and the reference line, to carry the potential of these lines to the level of a reference potential that is different from the initial potential stored in the storage cell and a step for the selection of the storage cell to produce a modification of the potential of the bit line and thus create an initial difference between the potentials of the bit line and the reference line. It also includes a step for discharging the bit line and the reference line and a step for the production of an output signal whose state represents values of the discharge currents.