发明授权
- 专利标题： Bomine and iodine etch process for silicon and silicides
- 专利标题（中）： 用于硅和硅化物的Bine和碘蚀刻工艺
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申请号： US134290申请日： 1998-08-14
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公开(公告)号： US06020270A公开(公告)日： 2000-02-01
- 发明人: Jerry Yuen Kui Wong , David Nin-Kou Wang , Mei Chang , Alfred W. Mak , Dan Maydan
- 申请人： Jerry Yuen Kui Wong , David Nin-Kou Wang , Mei Chang , Alfred W. Mak , Dan Maydan
- 申请人地址： CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： CA Santa Clara
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; H01L21/3065 ; H01L21/3213 ; H01L21/762 ; H01L21/00
摘要：
A process for etching single crystal silicon, polysilicon, silicide and polycide using iodinate or brominate gas chemistry, is disclosed. The iodinate/brominate gas chemistry etches narrow deep trenches with very high aspect ratios and good profile control and without black silicon formation or other undesirable phenomena.
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