发明授权
US6023088A Semiconductor device formed on an insulator and having a damaged portion
at the interface between the insulator and the active layer
失效
半导体器件形成在绝缘体上并且在绝缘体和有源层之间的界面处具有损坏部分
- 专利标题： Semiconductor device formed on an insulator and having a damaged portion at the interface between the insulator and the active layer
- 专利标题（中）： 半导体器件形成在绝缘体上并且在绝缘体和有源层之间的界面处具有损坏部分
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申请号： US85016申请日： 1998-05-28
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公开(公告)号： US6023088A公开(公告)日： 2000-02-08
- 发明人: Jeong Hwan Son
- 申请人： Jeong Hwan Son
- 申请人地址： KRX Chungcheongbuk-do
- 专利权人： LG Semicon Co., Ltd.
- 当前专利权人： LG Semicon Co., Ltd.
- 当前专利权人地址： KRX Chungcheongbuk-do
- 优先权： KRX97-68562 19971213
- 主分类号： H01L21/22
- IPC分类号： H01L21/22 ; H01L21/265 ; H01L21/336 ; H01L21/762 ; H01L29/786 ; B32B5/16
摘要：
The semiconductor device includes and the method for fabricating the same forms a damaged region under a gate electrode to improve device performance and simplify the process. The semiconductor device includes a substrate in which a buried insulating layer is formed; device isolating layers buried in first predetermined areas of the substrate to contact with the buried insulating layer; a gate electrode formed over a second predetermined area of the substrate; sidewall spacers formed on both sides of the gate electrode; source and drain regions at both sides of the gate electrode; and the damaged region at boundary of the buried insulating layer under the gate electrode.
公开/授权文献
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